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March 2004
STS5PF20V
P-CHANNEL 20V - 0.065
- 5A SO-8
2.5V-DRIVE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.065
(@4.5V)
s
TYPICAL R
DS
(on) = 0.085
(@2.5V)
s
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven
at 2.5V.
APPLICATIONS
s
POWER MANAGEMENT IN CELLULAR
PHONES
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ORDER CODES
TYPE
V
DSS
R
DS(on)
I
D
STS5PF20V
20 V
< 0.080
(@4.5V)
< 0.10
(@2.5V)
5 A
PART NUMBER
MARKING
PACKAGE
PACKAGING
STS5PF20V
S5PF20V
SO-8
TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
STS5PF20V
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ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
J
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
20
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
20
V
V
GS
Gate- source Voltage
8
V
I
D
Drain Current (continuous) at T
C
= 25C
5
A
I
D
Drain Current (continuous) at T
C
= 100C
3.1
A
I
DM
( )
Drain Current (pulsed)
20
A
P
TOT
Total Dissipation at T
C
= 25C
2.5
W
Rthj-amb
Thermal Resistance Junction-ambient Max
50
C/W
T
j
Max. Operating Junction Temperature
55 to 150
C
T
stg
Storage Temperature
55 to 150
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 8V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
0.45
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5V, I
D
= 2.5 A
0.065
0.080
V
GS
= 2.5V, I
D
= 2.5 A
0.085
0.10
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 2.5 A
6.6
S
C
iss
Input Capacitance
V
DS
= 15 V, f = 1 MHz, V
GS
= 0
412
pF
C
oss
Output Capacitance
179
pF
C
rss
Reverse Transfer
Capacitance
42.5
pF
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STS5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 10 V, I
D
= 2.5 A
R
G
= 4.7
V
GS
= 2.5 V
(see test circuit, Figure 1)
11
ns
t
r
Rise Time
47
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 5 A,
V
GS
= 2.5V
(see test circuit, Figure 2)
4.5
0.73
1.75
6
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 10 V, I
D
= 2.5 A,
R
G
= 4.7
,
V
GS
= 2.5 V
(see test circuit, Figure 1)
39
20
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
5
A
I
SDM
Source-drain Current (pulsed)
20
A
V
SD
(1)
Forward On Voltage
I
SD
= 5 A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100A/s,
V
DD
= 16 V, T
j
= 150C
(see test circuit, Figure 3)
32
12.8
0.8
ns
nC
A
STS5PF20V
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Safe Operating Area
Thermal Impedence
Static Drain-source On Resistance
Transconductance
Output Characteristics
Transfer Characteristics
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STS5PF20V
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
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