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October 2002
.
STS8DNF3LL
DUAL N-CHANNEL 30V - 0.017
- 8A SO-8
LOW GATE CHARGE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.017
s
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
TYPE
V
DSS
R
DS(on)
I
D
STS8DNF3LL
30 V
<0.020
8 A
SO-8
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
Single Operation
8
A
Drain Current (continuous) at T
C
= 100C
Single Operation
5
I
DM
(
)
Drain Current (pulsed)
32
A
P
tot
Total Dissipation at T
C
= 25C Dual operating
Total Dissipation at T
C
= 25C Single operating
2
1.6
W
W
INTERNAL SCHEMATIC DIAGRAM
STS8DNF3LL
2/8
THERMAL DATA
(*)
When mounted on FR-4 board with 0.5 in
2
pad of Cu.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Single Operating
Dual Operating
Thermal Operating Junction-ambient
Storage Temperature
78
62.5
150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 4 A
V
GS
= 4.5 V
I
D
= 4 A
0.017
0.020
0.020
0.024
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=15 V
I
D
= 4 A
12.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
800
250
60
pF
pF
pF
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STS8DNF3LL
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 4 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 1)
18
32
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V I
D
= 8 A V
GS
= 5 V
(see test circuit, Figure 2)
12.5
3.2
4.5
17
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 4 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 1)
21
11
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
8
32
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 8 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 8 A
di/dt = 100A/s
V
DD
= 15 V
T
j
= 150C
(see test circuit, Figure 3)
23
17
1.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STS8DNF3LL
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STS8DNF3LL
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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