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PRELIMINARY DATA
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STSJ100NH3LL
N-CHANNEL 30V - 0.0027
- 100A PowerSO-8TM
STripFETTM III POWER MOSFET FOR DC-DC CONVERSION
s
TYPICAL R
DS
(on) = 0.0027
@ 10V
s
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
The STSJ100NH3LL utilizes the latest advanced
design rules of ST's proprietary STripFETTM
technology. This process compled to unique
metallization techniques realizes the most
advanced low voltage MOSFET in SO-8 ever
produced. The exposed slug reduces the R
thj-c
improving the current capability.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
TYPE
V
DSS
R
DS(on)
I
D
STSJ100NH3LL
30 V
<0.0035
100 A
PowerSO-8TM
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
18
V
I
D
Drain Current (continuous) at T
C
= 25C
100
A
I
D
Drain Current (continuous) at T
C
= 25C (#)
22
A
I
D
Drain Current (continuous) at T
C
= 100C
62.5
A
I
DM
(
)
Drain Current (pulsed)
400
A
P
tot
Total Dissipation at T
C
= 25C
Total Dissipation at T
C
= 25C (#)
70
3
W
W
STSJ100NH3LL
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THERMAL DATA
(#)
When Mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
[
10 sec.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-c
Rthj-amb
T
j
T
stg
Thermal Resistance Junction-case
(#)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
Max
Max
1.8
42
150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 18 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 50 A
V
GS
= 4.5 V
I
D
= 50 A
0.0027
0.0035
0.0035
0.005
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=10 V
I
D
= 12 A
30
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4450
655
50
pF
pF
pF
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STSJ100NH3LL
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 50 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
18
50
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V I
D
=100A V
GS
=4.5V
(see test circuit, Figure 2)
32
12.5
10
43
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 50 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
75
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
100
400
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 100 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 100 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 3)
32
34
2.1
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STSJ100NH3LL
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Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive
Load
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STSJ100NH3LL
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