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March 2002
STSJ25NF3LL
N-CHANNEL 30V - 0.009
- 25A PowerSO-8TM
LOW GATE CHARGE STripFETTM II POWER MOSFET
(*)Value limited by wires bonding
s
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
s
TYPICAL R
DS
(on) = 0.009
s
TYPICAL Q
g
= 21 nC
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size
TM"
strip-based process. This silicon, housed in thermal-
ly improved SO-8 package, exhibits optimal on-re-
sistance versus gate charge trade-off plus lower
R
thj-c
.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCs
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STSJ25NF3LL
30 V
< 0.011
25 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C (*)
Drain Current (continuous) at T
A
= 25C (#)
Drain Current (continuous) at T
C
= 100C
25
12
16
A
A
A
I
DM
(
l
)
Drain Current (pulsed)
100
A
P
TOT
Total Dissipation at T
C
= 25C
Total Dissipation at T
A
= 25C (#)
70
3
W
W
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
STSJ25NF3LL
2/8
THERMAL DATA
(#) When mounted on 1inch FR4 Board, 2oz of Cu, t
10 sec.
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-c
Thermal Resistance Junction-case Max
1.8
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max (#)
42
C/W
T
j
Max. Operating Junction Temperature
150
C
T
stg
Storage Temperature
55 to 150
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 12.5 A
0.009
0.011
V
GS
= 4.5 V, I
D
= 12.5 A
0.011
0.013
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5 A
20
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
1700
pF
C
oss
Output Capacitance
500
pF
C
rss
Reverse Transfer
Capacitance
115
pF
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STSJ25NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 12.5 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
47
ns
t
r
Rise Time
60
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 25 A,
V
GS
= 4.5 V
21
10
8.4
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 24 V, I
D
= 12.5 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 3)
34
24
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
25
A
I
SDM
(1)
Source-drain Current (pulsed)
100
A
V
SD
(2)
Forward On Voltage
I
SD
= 25 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
I
SD
= 25 A, di/dt = 100A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 5)
40
52
2.4
ns
nC
A
Thermal Impedance
Safe Operating Area
STSJ25NF3LL
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Capacitance Variations
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
Gate Charge vs Gate-source Voltage
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STSJ25NF3LL
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
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