1/6
PRELIMINARY DATA
May 2002
.
STT2PF60L
P-CHANNEL 60V - 0.20
- 2A SOT23-6L
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.20
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
s
CELLULAR
MARKING
s
STP6
TYPE
V
DSS
R
DS(on)
I
D
STT2PF60L
60 V
<0.25
2 A
SOT23-6L
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
15
V
I
D
Drain Current (continuous) at T
C
= 25C
2
A
I
D
Drain Current (continuous) at T
C
= 100C
1.3
A
I
DM
(
)
Drain Current (pulsed)
8
A
P
tot
Total Dissipation at T
C
= 25C
1.6
W
INTERNAL SCHEMATIC DIAGRAM
STT2PF60L
2/6
THERMAL DATA
(*) Mounted on a 1 in
2
pad of 2 oz Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
Max
78
156
150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 15 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 1 A
V
GS
= 4.5 V
I
D
= 1 A
0.20
0.24
0.25
0.30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 10 V
I
D
=1 A
3
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz, V
GS
= 0
313
67
25
pF
pF
pF
3/6
STT2PF60L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 1 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 1)
44
34
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V I
D
= 2A V
GS
=5V
(see test circuit, Figure 2)
5
0.5
2.2
7
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 1 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 1)
42
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
2
8
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 2 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 3)
38
47.5
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STT2PF60L
4/6
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive
Load
5/6
STT2PF60L
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
0.035
0.057
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.25
0.50
0.010
0.020
C
0.09
0.20
0.004
0.008
D
2.80
3.10
0.110
0.122
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.35
0.55
0.014
0.022
e
0.95
0.037
e1
1.90
0.075
A A2
A1
b
e
e1
c
E
L
D
E1
SOT23-6L MECHANICAL DATA
PDF 
ZIP