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October 2002
.
STT3PF20V
P-CHANNEL 20V - 0.14
W
- 2.2A SOT23-6L
2.7-DRIVE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.14
W
(@4.5V)
s
TYPICAL R
DS
(on) = 0.20
W
(@2.7V)
s
ULTRA LOW THRESHOLD GATE DRIVE
(2.7V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
CELLULAR
MARKING
s
STP2
TYPE
V
DSS
R
DS(on)
I
D
STT3PF20V
!W
1!W5#$W
1!$W5!&W
!!6
SOT23-6L
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
20
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
W
)
20
V
V
GS
Gate- source Voltage
12
V
I
D
Drain Current (continuous) at T
C
= 25C
2.2
A
I
D
Drain Current (continuous) at T
C
= 100C
1.39
A
I
DM
(
)
Drain Current (pulsed)
8.8
A
P
tot
Total Dissipation at T
C
= 25C
1.6
W
INTERNAL SCHEMATIC DIAGRAM
STT3PF20V
2/8
THERMAL DATA
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
78
-55 to 150
-55 to 150
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 12 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
0.6
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V
I
D
= 1 A
V
GS
= 2.7 V
I
D
= 1 A
0.14
0.20
0.20
0.25
W
W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=15 V
I
D
= 1 A
4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz, V
GS
= 0
315
87
17
pF
pF
pF
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