ChipFind - документация

Электронный компонент: STTA106U

Скачать:  PDF   ZIP
SPECIFIC TO FREEWHEEL MODE
OPERATIONS : FREEWHEEL OR BOOSTER
DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
and MOSFET in all freewheel mode operations
and is particulary suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Available either in SMB or F126 axial package,
these 600V devices are particularly intended for
use on 240V domestic mains.
DESCRIPTION
I
F(AV)
1A
V
RRM
600V
t
rr
(typ)
20ns
V
F
(max)
1.5V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
6
A
I
FRM
Repetitive peak forward current
tp = 5
s
F = 5kHz square
10
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
25
A
T
j
Maximum operating junction temperature
125
C
T
stg
Storage temperature range
- 65 to + 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA106/U
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
SMB
STTA106U
F126
STTA106
November 1999 - Ed: 5C
1/8
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
= 1A
Tj = 25C
Tj = 125C
1.1
1.75
1.5
V
I
R **
Reverse leakage current
V
R
= 0.8 x
V
RRM
Tj = 25C
Tj = 125C
250
10
750
A
V
to
Threshold voltage
Ip < 3.I
F(AV)
Tj = 125C
1.15
V
Rd
Dynamic resistance
350
m
Test pulse :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-I)
Junction to lead
SMB
23
C/W
Junction to lead L=5mm
F126
45
C/W
P
1
Conduction power
dissipation
I
F(AV)
= 0.8A
= 0.5
Tlead= 93C
SMB
1.4
W
I
F(AV)
= 0.8A
= 0.5
Tlead= 60C
F126
1.4
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tlead= 90C
SMB
1.5
W
Tlead= 60C
F126
1.5
W
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 0.5 A I
R
= 1A Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
= 30V
20
50
ns
I
RM
Maximum
recovery current
Tj = 125C VR = 400V I
F
= 1A
dI
F
/dt = -8 A/
s
dI
F
/dt = -50 A/
s
1.6
0.6
A
S factor
Softness factor
Tj = 125C V
R
= 400V I
F
=1A
dI
F
/dt = -50 A/
s
1.1
/
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward
recovery time
Tj = 25C
I
F
= 1 A, dI
F
/dt = 8 A/
s
measured at 1.1
V
F
max
500
ns
V
Fp
Peak forward
voltage
10
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ Rd x I
F
2
(RMS)
STTA106/U
2/8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IF(av) (A)
P1(W)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Conduction losses versus average current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1E-2
1E-1
1E+0
1E+1
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
0
50
100
150
200
0
1
2
3
4
5
6
7
8
dIF/dt(A/s)
IRM(A)
VR=400V
Tj=125C
IF=2*IF(av)
IF=IF(av)
Fig. 3: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
20
40
60
80
100 120 140 160 180 200
0
25
50
75
100
125
150
175
200
225
trr(ns)
VR=400V
Tj=125C
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/s)
Fig. 4: Reverse recovery time versus dI
F
/dt (90%
confidence).
0
10
20
30
40
50
60
70
80
90
100
0.6
0.8
1.0
1.2
1.4
1.6
S factor
IF=2*IF(av)
VR=400V
Tj=125C
dIF/dt(A/s)
Fig. 5: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(C)
IRM
S factor
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125C).
STTA106/U
3/8
0
20
40
60
80
100 120 140 160 180 200
0
5
10
15
20
25
30
35
40
VFP(V)
IF=2A
Tj=125C
dIF/dt(A/s)
Fig. 7: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0
20
40
60
80
100 120 140 160 180 200
0
50
100
150
200
250
300
350
400
450
500
550
tfr(ns)
IF=2A
VFR=1.1*VF max.
Tj=125C
dIF/dt(A/s)
Fig. 8: Forward recovery time versus dI
F
/dt (90%
confidence).
1
10
100
200
1
2
5
10
VR(V)
C(pF)
F=1MHz
Fig. 9: Junction capacitance versus reverse volt-
age applied (typical values).
STTA106/U
4/8
SWITCHING
LOSSES
in the transistor
due to the diode
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
SWITCHING
LOSSES
in the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH
TM
is especially designed to
provide the lowest overall power losses in any
"Freewhell Mode" application (see fig. A)
considering both diode and companion transistor,
thus optimizing the overall performance in the end
application.
The way of calculating the power losses is given
below :
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
tp
T
F = 1/T
= tp/T
VR
STTA106/U
5/8