November 1999 - Ed: 4C
SPECIFICTO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
INSULATED PACKAGE : ISOTOP
Electrical insulation : 2500V
RMS
Capacitance < 45 pF
FEATURES AND BENEFITS
ISOTOP
TM
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applicationsand in booster diode
applications in power factor control circuitries.
Packaged either in ISOTOP or SOD93 these 600V
devices are particularly intended for use on 240V
domestic mains.
DESCRIPTION
I
F(AV)
60A / 2 x 60A
V
RRM
600V
t
rr
(typ)
45ns
V
F
(max)
1.5V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
V
RSM
Non repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
SOD93
80
A
ISOTOP
150
A
I
FRM
Repetitive peak forward current
tp=5
s F=5kHz square
450
A
I
FSM
Surge non repetitive forward current
tp=10 ms sinusoidal
500
A
T
j
Maximum operating junction temperature
150
C
T
stg
Storage temperature range
-65 to 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
STTA6006P
STTA12006TV1/2
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
K2
A2
A1
K1
STTA12006TV1
K2
A2
A1
K1
STTA12006TV2
K
A
K
SOD93
STTA6006P
1/8
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
=60A
Tj = 25
C
Tj = 125
C
1.25
1.75
1.5
V
V
I
R **
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
5
200
12
A
mA
V
to
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.14
V
rd
Dynamic resistance
6
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-c)
Junction to case thermal resistance
Per diode
0.85
C/W
Total
0.47
Coupling
0.1
P
1
Conduction power dissipation
I
F(AV)
= 60A
=0.5
SOD93
Tc= 64
C
108
W
ISOTOP
Tc= 58
C
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
SOD93
Tc= 54
C
120
W
ISOTOP
Tc= 48
C
THERMAL AND POWER DATA (Per diode)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
45
80
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 400V
I
F
=60A
dI
F
/dt = -480 A/
s
dI
F
/dt = -500 A/
s
24
38
A
S factor
Softness factor
Tj = 125
C V
R
= 400V
I
F
=60A
dI
F
/dt = -500 A/
s
0.37
/
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery
time
Tj = 25
C
I
F
=60 A, dI
F
/dt = 480 A/
s
measured at, 1.1
V
F
max
700
ns
V
Fp
Peak forward voltage Tj = 25
C
I
F
=60A, dI
F
/dt = 480 A/
s
14
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA12006TV1/2 / STTA6006P
2/8
P1(W)
0
5
10 15 20 25 30 35 40 45 50 55 60
0
20
40
60
80
100
120
= 0 . 2
= 0 . 5
= 1
IF(av)(A)
T
= tp/T
tp
= 0 .1
Fig. 1: Conduction losses versus average current.
VFM(V)
1
10
100
1000
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
MAXIMUM VALUES
IFM(A)
Tj=125 C
o
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
IRM(A)
0
100 200 300 400 500 600 700 800 900 1000
0
5
10
15
20
25
30
35
40
45
50
55
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt( A/ s)
I F= 30A
IF=1 20A
I F= 60A
Fig. 4: Peak reverse recovery current versus
dI
F
/dt.
0
100 200 300 400 500 600 700 800 900 1000
50
75
100
125
150
175
200
225
250
275
300
325
350
trr(ns)
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
I F=30 A
IF=1 20A
I F=6 0A
Fig. 5: Reverse recovery time versus dI
F
/dt.
S factor
0
100 200 300 400 500 600 700 800 900 1000
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
dIF/dt(A/ s)
VR=400V
IF<2xI F( av)
Typical values Tj=125 C
o
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt.
STTA12006TV1/2 / STTA6006P
3/8
0
25
50
75
100
125
150
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
2.8
3.0
3.3
3.5
3.8
4.0
IRM
S factor
Tj(oC)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125
C).
VFP(V)
0
200
400
600
800
1000
1200
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
90% CONFIDENCE Tj=125 C
o
dIF/dt( A/ s)
IF =IF (av)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt.
tfr(ns)
0
200
400
600
800
1000
1200
0
100
200
300
400
500
600
700
800
900
1000
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
IF=IF (av)
VFr=1.1*VF max.
Fig. 9: Forward recovery time versus dI
F
/dt.
STTA12006TV1/2 / STTA6006P
4/8
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA12006TV1/2 / STTA6006P
5/8
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