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Электронный компонент: STTA1512P

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TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY
INSULATED PACKAGE : DOP3I
Electrical insulation : 2500V
RMS
Capacitance : 12pF
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power
losses
in
any
associated
switching IGBT or MOSFET in all freewheel mode
operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
I
F(AV)
15A
V
RRM
1200V
t
rr
(typ)
55ns
V
F
(max)
1.9V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
50
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
220
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
150
A
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values)
STTA1512P/PI
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
SOD93
STTA1512P
K
A
Isolated
DOP3I
STTA1512PI
1/9
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
=15A
Tj = 25
C
Tj = 125
C
1.3
2.1
1.9
V
V
I
R **
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
1.3
100
6.0
A
mA
Vto
Threshold voltage
Ip < 3.I
F(AV
)
Tj = 125
C
1.48
V
Rd
Dynamic resistance
Tj = 125
C
25
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms ,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
R
th(j-c)
Junction to case thermal resistance
SOD93
DOP3I
1.6
2.1
C/W
P
1
Conduction power dissipation
I
F(AV)
= 15A
=0.5
SOD93
DOP3I
Tc= 95
C
Tc= 78
C
34
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
SOD93
DOP3I
Tc= 89
Tc= 70
C
38
W
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
55
105
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 600V
I
F
=15A
dI
F
/dt = -120 A/
s
dI
F
/dt = -500 A/
s
33
20
A
S
factor
Softness factor
Tj = 125
C V
R
= 600V
I
F
=15A
dI
F
/dt = -500 A/
s
1.2
/
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery time
Tj = 25
C
I
F
=15 A, dI
F
/dt = 120 A/
s
measured at 1.1
V
F
max
900
ns
V
Fp
Peak forward voltage
Tj = 25
C
I
F
=15A, dI
F
/dt = 120 A/
s
I
F
=40A, dI
F
/dt = 500 A/
s
40
30
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ Rd x I
F
2
(RMS)
STTA1512P/PI
2/9
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
IF(av) (A)
P1(W)
= 0.1
= 0.2
= 0.5
= 0.1
T
=tp/T
tp
Fig. 1: Conduction losses versus average
current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
200
VFM(V)
IFM(A)
Tj=125
C
Fig. 2: Forward voltage drop versus forward
current (maximum values).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
100
200
300
400
500
0
100
200
300
400
500
600
700
800
trr(ns)
VR=600V
Tj=125
C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/
s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
0
100
200
300
400
500
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
S factor
VR=600V
Tj=125
C
IF<2*IF(av)
dIF/dt(A/
s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
0
100
200
300
400
500
0
10
20
30
40
50
IRM(A)
VR=600V
Tj=125
C
dIF/dt(A/
s)
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
STTA1512P/PI
3/9
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(
C)
IRM
S factor
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature.
0
100
200
300
400
500
100
200
300
400
500
600
tfr( ns)
Tj=125
C
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/
s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence).
0
100
200
300
400
500
0
10
20
30
40
50
60
70
VFP(V)
Tj=125
C
IF=IF(av)
dIF/dt(A/
s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
STTA1512P/PI
4/9
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The 1200V TURBOSWITCH
series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
tp
T
F = 1/T
= tp/T
VR
STTA1512P/PI
5/9