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Электронный компонент: STTA306B

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STTA306B
November 1999 - Ed: 3C
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
I
F(AV)
3 A
V
RRM
600 V
t
rr
(typ)
20 ns
V
F
(max)
1.65 V
MAIN PRODUCT CHARACTERISTICS
SPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST, AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and
is particulary suitable and efficient in motor control
freewheel applications and in booster diode appli-
cations in Power Factor Control circuitries.
Packaged in DPAK, these 600V devices are par-
ticularly intended for use on 240V domestic mains.
DESCRIPTION
DPAK
NC
K
A
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
6
A
I
FRM
Repetitive peak forward current
tp=5
s F=5 kHz square
20
A
I
FSM
Surge non repetitive forward current tp=10 ms sinusoidal
35
A
Tj
Maximum operating junction temperature
125
C
T
stg
Storage temperature range
- 65 to + 150
C
TM : TURBOSWITCH is a trademark from STMicroelectronics
ABSOLUTE RATINGS (limiting values)
1/8
Symbol
Parameter
Tests conditions
Value
Unit
R
th (j-c)
Junction to case
6
C/W
P
1
Conduction power dissipation
I
F(AV)
= 1.5A,
= 0.5
T
c
= 110C
2.5
W
P
max
Total power dissipation
P
max
= P
1
+ P
3
(P
3
= 10% P
1
)
T
c
= 108C
2.8
W
THERMAL AND POWER DATA
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 3 A
1.85
V
Tj = 125
C
I
F
= 3 A
1.3
1.65
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= 0.8 X V
RRM
20
A
Tj = 125
C
500
1200
V
to
Threshold voltage
Ip < 3.I
F(AV)
Tj = 125C
1.15
V
Rd
Dynamic resistance
175
m
Test pulse :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ Rd x I
F
2
(RMS)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Tj = 25C
I
F
=0.5A
I
R
=1A I
rr
=0.25A
I
F
=1A dI
F
/dt= -50A/
s
V
R
=30V
20
50
ns
I
RM
Maximum reverse
recovery current
Tj = 125C
I
F
=3A
V
R
=400V
dI
F
/dt = -16A/
s
dI
F
/dt = -50A/
s
2.0
1.2
A
S factor
Softness factor
Tj = 125C
V
R
=400V I
F
=3A
dI
F
/dt = -50A/
s
1.1
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t
fr
Forward recovery
time
Tj = 25C
I
F
=3A
dI
F
/dt = 16A/
s
Measured at 1.1 x V
Fmax
500
ns
V
FP
Peak forward
voltage
Tj = 25C
I
F
=2A
dI
F
/dt = 16A/
s
10
V
TURN-ON SWITCHING
STTA306B
2/8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1E-2
1E-1
1E+0
1E+1
5E+1
IFM(A)
VFM(V)
Tj=125C
Tj=25C
Fig. 2: Forward voltage drop versus forward
current (maximum values).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
Zth(j-a) (C/W)
tp(s)
T
=tp/T
tp
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 3: Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout).
0
20
40
60
80
100 120 140 160 180 200
0
50
100
150
200
250
300
350
trr(ns)
VR=400V
Tj=125C
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
4
5
6
7
8
9
IRM(A)
VR=400V
Tj=125C
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/s)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
20
40
60
80
100
120
140
160
180
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
S factor
IF<2*IF(av)
VR=400V
Tj=125C
dIF/dt(A/s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
P1(W)
IF(av) (A)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 1: Conduction losses versus average current.
STTA306B
3/8
0
20
40
60
80
100 120 140 160 180 200
0
50
100
150
200
250
300
tfr(ns)
IF=IF(av)
VFR=1.1*VF max.
Tj=125C
dIF/dt(A/s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence).
1
10
100
200
1
2
5
10
VR(V)
C(pF)
F=1MHz
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
14
16
18
20
22
24
VFP(V)
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
IRM
S factor
Tj(C)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125C).
STTA306B
4/8
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
SWITCHING
LOSSES
in the diode
CONDUCTION
LOSSES
in the diode
SWITCHING
LOSSES
in the transistor
due to the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH
TM
is especially designed to
provide the lowest overall power losses in any
Freewheel Mode application (see fig. A) consider-
ing both the diode and the companion transistor,
thus optimizing the overall performance in the end
application.
The way of calculating the power losses is given
below :
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
tp
T
F = 1/T
= tp/T
VR
STTA306B
5/8