STTA312B
November 1999 - Ed: 4A
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
I
F(AV)
3 A
V
RRM
1200 V
t
rr
(typ)
65 ns
V
F
(max)
1.7 V
MAIN PRODUCT CHARACTERISTICS
SPECIFICTO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZA-
TION AND RECTIFICATION
ULTRA-FAST, SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES AND
PARTICULARY LOW FORWARD VOLTAGE
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
"freewheel mode" operations.
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitablefor the secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
DPAK
K
A
NC
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
V
RSM
Non repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
6
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
35
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
25
A
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
125
C
ABSOLUTE RATINGS (limiting values)
TURBOSWITCH is a trademark of STMicroelectronics
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DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Value
Unit
R
th (j-c)
Junction to case thermal resistance
6.5
C/W
P
1
Conduction power dissipation
I
F(AV)
= 3A,
= 0.5
Tc = 80
C
6.7
W
P
max
Total power dissipation
P
max
= P
1
+ P
3
(P
3
= 10% P
1
)
Tc = 76
C
7.5
W
THERMAL AND POWER DATA
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
V
F
**
Forward voltage drop
I
F
= 3 A
Tj = 25
C
1.8
V
I
F
= 3 A
Tj = 125
C
1.15
1.7
I
R
*
Reverse leakage current
V
R
= 0.8
X V
RRM
Tj = 25
C
20
A
Tj = 125
C
150
400
A
Vto
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.15
V
rd
Dynamic resistance
185
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms ,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Tj = 25
C
I
F
= 0.5A I
R
=1A I
rr
= 0.25A
I
F
= 1A
dI
F
/dt= 50A/
s
V
R
= 30V
65
115
ns
I
RM
Maximum
recovery current
Tj = 125
C
I
F
= 3A V
R
= 600V
dI
F
/dt = -16A/
s
dI
F
/dt = -50A/
s
6.0
3.6
A
S factor
Softness factor
Tj = 125
C
V
R
= 600V
I
F
= 3A
dI
F
/dt = -50A/
s
1.2
-
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
fr
Forward recovery
time
Tj = 25
C
I
F
=3A dI
F
/dt = 16A/
s
Measured at 1.1 x V
Fmax
900
ns
V
FP
Peak forward voltage
35
V
TURN-ON SWITCHING
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
7
8
IF(av) (A)
P1(W)
= 1
= 0.5
= 0.2
= 0.1
Fig. 1: Conductionlosses versus average current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1E-2
1E-1
1E+0
1E+1
3E+1
VFM(V)
IFM(A)
Tj=25
C
Tj=125
C
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
dIF/dt(A/
s)
IRM(A)
VR=600V
Tj=125
C
IF=2*IF(av)
IF=IF(av)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
10
20
30
40
50
60
70
80
90
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
S factor
IF<2*IF(av)
VR=600V
Tj=125
C
dIF/dt(A/
s)
Fig. 6: Softness factor tb/ta versus dI
F
/dt (typical
values).
0
10
20
30
40
50
60
70
80
90
100
100
200
300
400
500
600
trr(ns)
VR=600V
Tj=125
C
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/
s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
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0
20
40
60
80
100
0
10
20
30
40
50
60
VFP(V)
IF=IF(av)
Tj=125
C
dIF/dt(A/
s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(
C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj=125
C).
0
20
40
60
80
100
400
500
600
700
800
900
1000
tfr(ns)
VFR=1.1*VF max.
IF=IF(av)
Tj=125
C
dIF/dt(A/
s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence).
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TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The 1200V TURBOSWITCH
TM
series has been
designed to provide the lowest overall power
losses in all frequency or high pulsed current
operations.
In such application (fig. A to D), the way of
calculating the power losses is given below :
APPLICATION DATA
SWITCHING
LOSSES
in the diode
due to the diode
Fig. A : "FREEWHEEL MODE".
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA312B
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