November 1999 - Ed : 3D
SPECIFICTO"FREEWHEELMODE"OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : ISOWATT220AC
Electrical insulation : 2000VDC
Capacitance < 12 pF
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applicationsand in booster diode
applications in power factor control circuitries.
Packaged either in TO-220AC, ISOWATT220AC
or in DPAK, these 600V devices are particularly
intended for use on 240V domestic mains.
DESCRIPTION
I
F(AV)
5A
V
RRM
600V
t
rr
(typ)
20ns
V
F
(max)
1.5V
MAIN PRODUCTS CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
V
RSM
Non repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
TO-220AC
ISOWATT220AC
20
A
DPAK
10
A
I
FRM
Repetitive peak forward current
tp=5
s F=5kHz square
65
A
I
FSM
Surge non repetitive forward current
tp=10 ms sinusoidal
55
A
T
j
Maximum operating junction temperature
150
C
T
stg
Storage temperature range
-65 to 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA506D/F/B
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
TO-220AC
STTA506D
K
A
ISOWATT220AC
STTA506F
K
A
NC
DPAK
STTA506B
1/10
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F
*
Forward voltage drop
I
F
=5A
Tj = 25
C
Tj = 125
C
1.25
1.75
1.5
V
V
I
R
**
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
0.75
100
2
A
mA
V
to
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.15
V
rd
Dynamic resistance
70
m
Test pulse :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-c)
Junction to case
TO-220AC / DPAK
ISOWATT220AC
3.5
6.0
C/W
P
1
Conduction power dissipation
I
F(AV)
= 5A
=0.5
TO-220AC / DPAK
ISOWATT220AC
Tc= 118
C
Tc= 96
C
9
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
TO-220AC / DPAK
ISOWATT220AC
Tc= 115
C
Tc= 90
C
10
W
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
20
50
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 400V
I
F
=5A
dI
F
/dt = -40 A/
s
dI
F
/dt = -500 A/
s
11
3.0
A
S factor
Softness factor
Tj = 125
C V
R
= 400V
I
F
=5A
dI
F
/dt = -500 A/
s
0.55
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery
time
Tj = 25
C
I
F
=5 A, dI
F
/dt = 40 A/
s
measured at 1.1
V
F
max
500
ns
V
Fp
Peak forward
voltage
Tj = 25
C
I
F
=5A, dI
F
/dt = 40 A/
s
10
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA506D/F/B
2/10
0
50
100 150 200 250 300 350 400 450 500
0.00
0.50
1.00
1.50
2.00
2.50
P3(W)
Tj=125
C
F = 10kHz
VR=600V
dIF/dt(A/
s)
Fig. 1: Switching OFF losses versus dI/dt.
0
25
50
75
100
125
150
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
IRM
S factor
Tj(oC)
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125
C).
0
100 200 300 400 500 600 700 800 900 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
S factor
dIF/dt(A/ s)
VR= 400V
IF <2xIF(av)
Typical values Tj=125 C
o
Fig. 5: Softness factor (tb/ta) versus dI
F
/dt.
0
100 200 300 400 500 600 700 800 900 1000
0
20
40
60
80
100
120
140
160
180
trr(ns)
dIF/dt(A/ s)
VR=400V
IF=5A
IF=2.5A
90% CONFIDENCE Tj=125 C
o
IF=10A
Fig. 4: Reverse recovery time versus dI
F
/dt.
0
100 200 300 400 500 600 700 800 900 1000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
VR=400V
IF= 5A
IF=2.5A
90% CONFIDENCE Tj=125 C
o
IF=10A
dIF/dt(A/ s)
IRM(A)
Fig. 3: Peak reverse recovery current versus
dI
F
/dt.
0.1
1
10
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Tj=125 C
o
IFM(A)
MAXIMUM VALUES
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
STTA506D/F/B
3/10
0
10
20
30
40
50
60
70
80
90 100
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IF= IF( av)
VFP(V)
dIF/dt(A/ s)
90% CONFIDENCE Tj=125 C
o
Fig. 7: Transient peak forward voltage versus
dI
F
/ft.
tfr(ns)
0
10
20
30
40
50
60
70
80
90 100
0
50
100
150
200
250
300
350
400
450
500
VFr=1.1*VF max.
IF= IF( av)
90% CONFIDENCE Tj=125 C
o
dIF/dt( A/ s)
Fig. 8: Forward recovery time versus dI
F
/dt.
Fig. 10: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC).
Fig. 9: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC and DPAK).
STTA506D/F/B
4/10
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
CONDUCTION
LOSSES
in the diode
SWITCHING
LOSSES
in the transistor
due to the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
Fig. A : "FREEWHEEL" MODE
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA506D/F/B
5/10
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