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TURBOSWITCH is a trademark of STMicroelectronics.
August 2003 - Ed: 5B
n
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING,
DEMAGNETIZATION AND RECTIFICATION
n
ULTRA-FAST, SOFT RECOVERY.
n
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
n
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
n
HIGH REVERSE VOLTAGE CAPABILITY
n
INSULATED PACKAGES:
ISOWATT220AC, TO-220FPAC
n
Electrical insulation : 2000V DC
Capacitance : 12pF.
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease
power
losses
in
any
associated
switching IGBT or MOSFET in all "freewheel
mode" operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
I
F(AV)
5A
V
RRM
1200V
t
rr
(typ)
45ns
V
F
(max)
2.0V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
V
RSM
Non repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
TO-220AC / DPAK
20
A
ISOWATT220AC /
TO-220FPAC
10
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
70
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
45
A
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values)
STTA512D/F/B/FP
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
TO-220AC
STTA512D
K
A
ISOWATT220AC
STTA512F
K
A
NC
DPAK
STTA512B
K
A
TO-220FPAC
STTA512FP
STTA512D/F/B/FP
2/10
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
=5A
Tj = 25C
Tj = 125C
1.35
2.2
2.0
V
V
I
R **
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25C
Tj = 125C
0.3
100
2.0
A
mA
V
t0
Threshold voltage
Ip < 3.I
AV
Tj = 125C
1.57
V
Rd
Dynamic resistance
86
m
Pulse test: * tp = 380
s,
< 2%
** tp = 5 ms ,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
R
th(j-c)
Junction to case thermal
resistance
TO-220AC / DPAK
4.0
C/W
ISOWATT220AC /
TO-220FPAC
5.5
P
1
Conduction power dissipation
I
F(AV)
= 5A
=0.5
TO-220AC / DPAK Tc= 102C
12
W
ISOWATT220AC /
TO-220FPAC
Tc= 84C
P
max
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
TO-220AC / DPAK Tc= 98C
13
W
ISOWATT220AC /
TO-220FPAC
Tc= 78C
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/s V
R
=30V
45
95
ns
I
RM
Maximum reverse
recovery current
Tj = 125C VR = 600V
I
F
=5A
dI
F
/dt = -40 A/s
dI
F
/dt = -500 A/s
20
7.5
A
S
factor
Softness factor
Tj = 125C V
R
= 600V
I
F
=5A
dI
F
/dt = -500 A/s
1.2
/
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery
time
Tj = 25C
I
F
=5 A, dI
F
/dt = 40 A/s
measured at 1.1
V
F
max
900
ns
V
Fp
Peak forward voltage Tj = 25C
I
F
=5A, dI
F
/dt = 40 A/s
I
F
=40A, dI
F
/dt = 500 A/s
50
35
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA512D/F/B/FP
3/10
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
11
12
13
IF(av) (A)
P1(W)
= 1
= 0.5
= 0.2
= 0.1
Fig. 1: Conduction losses versus average current.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.01
0.10
1.00
10.00
100.00
VFM(A)
IFM(A)
Tj=125C
Fig. 2: Forward voltage drop versus forward
current (maximum values).
0
100
200
300
400
500
0
10
20
30
40
dIF/dt(A/s)
IRM(A)
VR=600V
Tj=125C
IF=2*IF(av)
IF=IF(av)
Fig. 3:
Peak reverse recovery current versus
dI
F
/dt (90% confidence).
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
trr(ns)
VR=600V
Tj=125C
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/s)
Fig. 6: Reverse recovery time versus dI
F
/dt (90%
confidence).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC
and DPAK).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Single pulse
= 0.1
= 0.2
= 0.5
tp(s)
Zth(j-c)/Rth(j-c)
Fig. 5: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(ISOWATT220AC and TO-220FPAC).
STTA512D/F/B/FP
4/10
0
100
200
300
400
500
0.60
0.80
1.00
1.20
1.40
S factor
VR=600V
Tj=125C
IF<2*IF(av)
dIF/dt(A/s)
Fig. 7: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(C)
IRM
S factor
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125C).
0
100
200
300
400
500
0
10
20
30
40
50
60
70
dIF/dt(A/s)
VFP(V)
IF=IF(av)
Tj=125C
Fig. 9:
Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0
100
200
300
400
500
100
200
300
400
500
tfr(ns)
VFR=1.1*VF max.
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig. 10: Forward recovery time versus dI
F
/dt (90%
confidence).
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