November 1999 - Ed: 4C
SPECIFICTO"FREEWHEELMODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : ISOTOP & DOP3I
Electrical insulation : 2500V
RMS
Capacitance < 12 pF (DOP3I)
Capacitance < 45 pF (ISOTOP)
FEATURES AND BENEFITS
ISOTOP
TM
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applications and in boosterdiode
applications in power factor control circuitries.
Packaged either in ISOTOP, DOP3I or SOD93
these 600V devices are particularly intended for
use on 240V domestic mains.
DESCRIPTION
I
F(AV)
30A / 2 x 30A
V
RRM
600V
t
rr
(typ)
35ns
V
F
(max)
1.5V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
V
RSM
Non repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
50
A
I
FRM
Repetitive peak forward current
tp=5
s F=5kHz square
300
A
I
FSM
Surge non repetitive forward current
tp=10 ms sinusoidal
230
A
T
j
Maximum operating junction temperature
150
C
T
stg
Storage temperature range
-65 to 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
STTA3006P/PI
STTA6006TV1/2
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
K2
A2
A1
K1
STTA6006TV1
K2
A2
A1
K1
STTA6006TV2
K
A
K
SOD93
STTA3006P
A
K
DOP3I
STTA3006PI
1/9
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-c)
Junction to case thermal
resistance
ISOTOP
Per diode
1.4
C/W
Total
0.75
DOP3I
1.8
SOD93
1.2
R
th(c)
ISOTOP
Coupling
0.1
C/W
P
1
Conduction power dissipation
I
F(AV)
= 30A
=0.5
ISOTOP
Tc= 74
C
54
W
DOP3I
Tc= 52
C
SOD93
Tc= 85
C
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
ISOTOP
Tc= 66
C
60
W
DOP3I
Tc= 42
C
SOD93
Tc= 78
C
THERMAL AND POWER DATA (Per diode)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
=30A
Tj = 25
C
Tj = 125
C
1.25
1.75
1.5
V
V
I
R **
Reverse leakage current
V
R
=0.8
V
RRM
Tj = 25
C
Tj = 125
C
3
150
8
A
mA
V
to
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.15
V
rd
Dynamic resistance
11
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
35
65
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 400V
I
F
=30A
dI
F
/dt = -240 A/
s
dI
F
/dt = -500 A/
s
20
19
A
S factor
Softness factor
Tj = 125
C V
R
= 400V
I
F
=30A
dI
F
/dt = -500 A/
s
0.40
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
STTA6006TV1/2/ STTA3006P/PI
2/9
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery
time
Tj = 25
C
I
F
=30A, dI
F
/dt = 240 A/
s
measured at, 1.1
V
F
max
600
ns
V
Fp
Peak forward voltage Tj = 25
C
I
F
=30A, dI
F
/dt = 240 A/
s
12
V
TURN-ON SWITCHING
P1(W)
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
0
10
20
30
40
50
60
= 0. 2
= 0 . 5
= 1
IF(av)(A)
T
=tp/T
tp
= 0 . 1
Fig. 1: Conduction losses versus average current.
VFM(V)
0.1
1
10
100
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
MAXIMUM VALUES
IFM(A)
Tj=125 C
o
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
IRM(A)
0
100 200 300 400 500 600 700 800 900 1000
0
5
10
15
20
25
30
35
40
45
VR=400V
dIF/dt(A/ s)
I F= 30A
I F=1 5A
IF=60A
90% CONFIDENCE Tj=125 C
o
Fig. 4: Peak reverse recovery current versus
dI
F
/dt.
STTA6006TV1/2 / STTA3006P/PI
3/9
trr(ns)
0
100 200 300 400 500 600 700 800 900 1000
0
25
50
75
100
125
150
175
200
225
250
VR= 400V
dIF/dt( A/ s)
IF=30A
IF=15A
I F=6 0A
90% CONFIDENCE Tj=125 C
o
Fig. 5: Reverse recovery time versus dI
F
/dt.
S factor
0
100 200 300 400 500 600 700 800 900 1000
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
dIF/dt(A/ s)
VR=400V
IF<2xI F( av)
Typical values Tj=125 C
o
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt.
0
25
50
75
100
125
150
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
IRM
S factor
Tj(oC)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125
C).
VFP(V)
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
IF=IF(av)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt.
tfr(ns)
0
100
200
300
400
500
600
0
50
100
150
200
250
300
350
400
450
500
550
600
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
VFr=1.1*VF max.
IF =IF (av)
Fig. 9: Forward recovery time versus dI
F
/dt.
STTA6006TV1/2/ STTA3006P/PI
4/9
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH
is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA6006TV1/2 / STTA3006P/PI
5/9
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