November 1999 - Ed: 3C
SPECIFICTO"FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
INSULATED PACKAGE : TO-220AC
Electrical insulation : 2500V
RMS
Capacitance < 7 pF
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applicationsand in booster diode
applications in power factor control circuitries.
Packaged
either
in
TO-220AC,
insulated
TO-220AC or in D
2
PAK, these 600V devices are
particularly intended for use on 240V domestic
mains.
DESCRIPTION
I
F(AV)
8A
V
RRM
600V
t
rr
(typ)
25ns
V
F
(max)
1.5V
MAIN PRODUCTS CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
V
RSM
Non repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
TO-220AC / D
2
PAK
30
A
TO-220AC ins.
20
A
I
FRM
Repetitive peak forward current
tp=5ms F=5kHz square
110
A
I
FSM
Surge non repetitive forward current
tp=10 ms sinusoidal
90
A
T
j
Maximum operating junction temperature
150
C
T
stg
Storage temperature range
-65 to 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA806D/DI/G
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
TO-220AC
STTA806D
K
A
Insulated
TO-220AC
STTA806DI
K
A
NC
D
2
PAK
STTA806G
1/9
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F
*
Forward voltage drop
I
F
=8A
Tj = 25
C
Tj = 125
C
1.25
1.75
1.5
V
V
I
R
**
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
1.5
100
4
A
mA
V
to
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.15
V
rd
Dynamic resistance
43
m
Test pulse :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
R
th(j-c)
Junction to case thermal
resistance
TO-220AC / D
2
PAK
TO-220AC ins.
2.2
3.3
C/W
P
1
Conduction power dissipation
I
F(AV)
= 8A
=0.5
TO-220AC / D
2
PAK
TO-220AC ins.
Tc= 118
C
Tc= 102
C
14.5
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
TO-220AC /D
2
PAK
TO-220AC ins.
Tc= 115
C
Tc= 97
C
16
W
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
25
52
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 400V
I
F
=8A
dI
F
/dt = -64 A/
s
dI
F
/dt = -500 A/
s
14
5.5
A
S factor
Softness factor
Tj = 125
C V
R
= 400V
I
F
=8A
dI
F
/dt = -500 A/
s
0.47
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery
time
Tj = 25
C
I
F
=8 A, dI
F
/dt = 64 A/
s
measured at, 1.1
V
F
max
500
ns
V
Fp
Peak forward voltage Tj = 25
C
I
F
=8A, dI
F
/dt = 64 A/
s
10
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA806D/DI/G
2/9
P1(W)
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
16
18
=0 . 2
=0 . 5
= 1
IF(av)(A)
T
= tp/T
tp
=0 . 1
Fig. 1: Conduction losses versus average current.
0.1
1
10
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
MAXIMUM VALUES
IFM(A)
Tj=125 C
o
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
100 200 300 400 500 600 700 800 900 1000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
IRM(A)
VR=400V
I F= 8A
I F= 4A
90% CONFIDENCE Tj=125 C
o
IF= 16A
dIF/dt(A/ s)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt.
0
100 200 300 400 500 600 700 800 900 1000
0
20
40
60
80
100
120
140
160
180
200
trr(ns)
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
I F= 8A
IF=4 A
IF=1 6A
Fig. 5: Reverse recovery time versus dI
F
/dt.
0
100 200 300 400 500 600 700 800 900 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
S factor
VR=400V
IF<2xI F( av)
Typical values Tj=125 C
o
dIF/dt( A/ s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt.
STTA806D/DI/G
3/9
0
25
50
75
100
125
150
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IRM
S factor
Tj(oC)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125
C).
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
VFP(V)
IF=IF (av)
90% CONFIDENCE Tj=125 C
o
dIF/dt( A/ s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt.
0
20
40
60
80
100
120
140
160
50
100
150
200
250
300
350
400
450
500
tfr(ns)
0
VFr=1.1*VF max.
IF=IF(av)
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
Fig. 9: Forward recovery time versus dI
F
/dt.
STTA806D/DI/G
4/9
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA806D/DI/G
5/9
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