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STTH1002C
March 2004 - Ed: 4
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged
in
DPAK,
D
2
PAK,
TO-220AB,
TO220-FPAB and I
2
PAK, this device is intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
DESCRIPTION
Suited for SMPS
Low losses
Low forward and reverse recovery times
Insulated package: TO-220FPAB
High junction temperature
Low leakage current
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
TO-220AB / TO-220FPAB / I
2
PAK / D
2
PAK /
20
A
DPAK
10
I
F(AV)
Average forward
current
=0.5
TO-220AB / I
2
PAK
/ D
2
PAK / DPAK
Tc = 155C
Per diode
5
A
Tc = 150C
Per device
10
Tc = 135C
Per diode
8
Tc = 125C
Per device
16
TO-220FPAB
Tc = 140C
Per diode
5
Tc = 120C
Per device
10
Tc = 110C
Per diode
8
Tc = 75C
Per device
16
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
50
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
Up to 2 x 8A
V
RRM
200 V
Tj (max)
175 C
V
F
(typ)
0.78 V
t
rr
(typ)
20 ns
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
A1
A2
K
I
2
PAK
STTH1002CR
A1
A2
K
TO-220AB
STTH1002CT
A1
A2
K
K
D
2
PAK
STTH1002CG
A1
A2
K
TO-220FPAB
STTH1002CFP
K
K
A1
A2
DPAK
STTH1002CB
STTH1002C
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
5
A
Tj = 125C
3
40
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 5 A
1.1
V
Tj = 25C
I
F
= 10 A
1.25
Tj = 150C
I
F
= 5 A
0.78
0.89
Tj = 150C
I
F
= 10 A
1.05
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.032 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 1 A V
R
= 30V
dI
F
/dt = 100 A/s
20
25
ns
I
RM
Reverse
recovery current
Tj = 125C
I
F
= 5 A V
R
= 160V
dI
F
/dt = 200 A/s
5.9
7.6
A
t
fr
Forward
recovery time
Tj = 25C
I
F
= 5 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
F
max
110
ns
V
FP
Forward
recovery voltage
Tj = 25C
I
F
= 5 A dI
F
/dt = 100 A/s
2.4
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th (j-c)
Junction to case
TO-220AB / I
2
PAK / D
2
PAK
/ DPAK
Per diode
4.0
C/W
Per device
2.5
TO-220FPAB
Per diode
6.5
Per device
5
R
th (j-c)
Coupling
TO-220AB / I
2
PAK / D
2
PAK / DPAK
1.0
C/W
TO-220FPAB
3.5
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
STTH1002C
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I (A)
M
0
10
20
30
40
50
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
=tp/T
tp
I
M
P = 10W
P = 5W
P = 2W
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
V
(V)
FM
I
(A)
FM
T =25C
j
T =150C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
Z
/R
th(j-c)
th(j-c)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
t (s)
p
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
I
2
PAK, D
2
PAK, DPAK).
10
100
0
50
100
150
200
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
I
(A)
FM
0
10
20
30
40
50
60
70
80
90
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
T =150C
j
T =25C
j
V
(V)
FM
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Z
/R
th(j-c)
th(j-c)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
t (s)
p
Fig. 3-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220FPAB).
STTH1002C
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t (ns)
rr
0
10
20
30
40
50
60
70
80
10
100
1000
dI /dt(A/s)
F
I =5A
F
V =160V
R
T =25C
j
T =125C
j
Fig. 6: Reverse recovery time versus dI
F
/dt
(typical values, per diode).
I
(A)
RM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
10
100
1000
dI /dt(A/s)
F
I =5A
F
V =160V
R
T =25C
j
T =125C
j
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
I
RM
Q
rr
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
T (C)
j
Q ;
rr
I
[T ]/Q ;I
[T =125C]
RM
j
rr RM
j
I =5A
F
V =160V
R
Fig. 8:
Dynamic parameters versus junction
temperature.
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
R
(C/W)
th(j-a)
S(Cu)(cm)
Fig. 9-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
CU
: 35m) for DPAK.
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
S(Cu)(cm)
R
(C/W)
th(j-a)
Fig. 9-1: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
CU
: 35m) for D
2
PAK.
Q (nC)
rr
0
20
40
60
80
100
120
140
160
180
200
220
240
10
100
1000
dI /dt(A/s)
F
I =5A
F
V =160V
R
T =25C
j
T =125C
j
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
STTH1002C
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PACKAGE MECHANICAL DATA
DPAK
6.7
6.7
3
3
1.6
1.6
2.3
2.3
FOOTPRINT
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH1002CB
STTH1002CB
DPAK
0.3 g
75
Tube
STTH1002CB-TR
STTH1002CB
DPAK
0.3 g
2500
Tape & reel
STTH1002CT
STTH1002CT
TO-220AB
2.23 g
50
Tube
STTH1002CG
STTH1002CG
D
2
PAK
1.48 g
50
Tube
STTH1002CG-TR
STTH1002CG
D
2
PAK
1.48g
1000
Tape & reel
STTH1002CR
STTH1002CR
I
2
PAK
1.49 g
50
Tube
STTH1002CFP
STTH1002CFP
TO-220FPAB
1.70 g
50
Tube
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