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STTH102
August 2001 - Ed: 2A
HIGH EFFICIENCY ULTRAFAST DIODE
The STTH102, which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Very low conduction losses
s
Negligible switching losses
s
Low forward and reverse recovery times
s
High junction temperature
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(AV)
Average forward current
Tl = 130C
=0.5
1
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
50
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
+ 175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
1 A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.78 V
trr (max)
20 ns
MAIN PRODUCT CHARACTERISTICS
DO-41
STTH102
Symbol
Parameter
Maximum
Unit
R
th (j-a)
Junction to ambient*
50
C/W
* On infinite heatsink with 10mm length.
THERMAL PARAMETERS
STTH102
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
1
A
Tj = 125C
1
25
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 1A
0.97
V
Tj = 125C
0.68
0.78
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.130 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
I
F
= 0.5 A Irr = 0.25 A
I
R
= 1A
Tj = 25C
12
20
ns
tfr
Forward recovery
time
I
F
= 1 A dI
F
/dt = 50A/
s
V
FR
= 1.1 x V
F
max
Tj = 25C
50
ns
V
FP
Forward recovery
voltage
Tj = 25C
1.8
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH102
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00
0.25
0.50
0.75
1.00
1.25
IF(av)(A)
PF(av)(W)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
Tamb(C)
Rth(j-a)=Rth(j-l)
Rth(j-a)=110C:W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (
= 0.5)
.
0
10
20
30
40
50
60
70
80
90
100
110
120
5
10
15
20
25
Lleads(mm)
Rth(j-a)
Rth(j-l)
Rth(C/W)
Fig. 3: Thermal resistance versus lead length.
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VFM(V)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
IFM(A)
Fig. 5:
Forward voltage drop versus forward
current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4, LIeads = 10mm).
1
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(pF)
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
STTH102
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0
10
20
30
40
50
60
70
1
10
100
1000
dIF/dt(A/s)
IF=1A
VR=100V
Tj=125C
Tj=125C
Tj=25C
trr(ns)
Fig. 7:
Reverse recovery time versus dIF/dt
(90% confidence).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
1000
dIF/dt(A/s)
IF=1A
VR=100V
Tj=125C
Tj=125C
Tj=25C
IRM(A)
Fig. 8: Peak reverse recovery current versus
dIF/dt (90% confidence).
1.0
1.5
2.0
2.5
3.0
3.5
25
50
75
100
125
150
175
Tj(C)
IRM
Qrr
trr
IF=1A
dIF/dt=200A/s
VR=100V
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25C]
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
STTH102
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PACKAGE MECHANICAL DATA
DO-41
C
A
B
O
/
O
/
D
O
/
D
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.1
5.20
0.160
0.205
B
2
2.71
0.080
0.107
C
25.4
1
D
0.712
0.863
0.028
0.034
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH102
STTH102
DO-41
0.34 g
2000
Ammopack
STTH102RL
STTH102
DO-41
0.34 g
5000
Tape & reel
s
Cooling method: by conduction (method A)
s
Epoxy meets UL 94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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proval of STMicroelectronics.
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2001 STMicroelectronics - Printed in Italy - All rights reserved.
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