1/5
STTH102A
July 2002 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
The STTH102A, which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Very low conduction losses
s
Negligible switching losses
s
Low forward and reverse recovery times
s
High junction temperature
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(AV)
Average forward current
Tl = 148C
=0.5
1
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
40
A
T
stg
Storage temperature range
+ 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
1A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.78 V
trr (max)
20 ns
MAIN PRODUCT CHARACTERISTICS
SMA
Symbol
Parameter
Maximum
Unit
R
th (j-l)
Junction to lead
30
C/W
THERMAL PARAMETERS
STTH102A
2/7
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
1
A
Tj = 125C
1
25
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 700 mA
0.90
I
F
= 1 A
0.97
Tj = 125C
I
F
= 1 A
0.68
0.78
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.130 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
Tj = 25C
I
F
= 0.5 A Irr = 0.25 A
I
R
= 1A
12
20
ns
tfr
Forward recovery
time
Tj = 25C
I
F
= 1 A dI
F
/dt = 50 A/
s
V
FR
= 1.1 x V
F
max
50
ns
V
FP
Forward recovery
voltage
Tj = 25C
I
F
= 1 A dI
F
/dt = 50 A/
s
1.8
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH102A
3/5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
(A)
F(AV)
P
(A)
F(AV)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
T
(C)
amb
R
th(j-a)
=R
th(j-l)
R
th(j-a)
=120C/W
I
(A)
F(AV)
Fig. 2: Average forward current versus ambient
temperature (
= 0.5)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4).
1
10
100
1
10
100
1000
V (V)
R
F=1MHz
V
osc
=30mV
T
j
=25C
C(pF)
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Typical values)
T
j
=125C
(Typical values)
I
(A)
FM
Fig. 4:
Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
1
10
100
1000
dI /dt(A/s)
F
I
F
=1A
V
R
=100V
T
j
=125C
T
j
=25C
t
(ns)
RR
Fig. 6: Reverse recovery time versus dI
F
/dt (90%
confidence).
STTH102A
4/5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
1000
dI /dt(A/s)
F
I
F
=1A
V
R
=100V
T
j
=125C
T
j
=25C
I
(A)
RM
Fig. 7: Peak reverse recovery current versus
dI
F
/dt (90% confidence).
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
35.0
1
10
100
1000
dI /dt(A/s)
F
I
F
=1A
V
R
=100V
T
j
=125C
T
j
=25C
Q
(nC)
RR
Fig. 8: Reverse recovery charges versus dI
F
/dt
(90% confidence).
1.0
1.5
2.0
2.5
3.0
3.5
25
50
75
100
125
150
175
Tj(C)
I
RM
Q
RR
t
RR
I
F
=1A
dI
F
/dt=200A/s
V
R
=100V
I
; t
; Q
[Tj] / I
; t
; Q
[Tj = 25C]
RM
RR
RR
RM
RR
RR
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(cm)
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
FR4, e = 35m).
STTH102A
5/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
PACKAGE MECHANICAL DATA
SMA
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
2.40
1.65
1.45
1.45
FOOTPRINT
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH102A
U12
SMA
0.07 g
5000
Tape & reel
s
Epoxy meets UL 94,V0
PDF 
ZIP