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STTH108/A
January 2003 - Ed: 2
HIGH VOLTAGE ULTRAFAST RECTIFIER
The STTH108, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering, demagneti-
zation in power supplies and other power switching
applications.
DESCRIPTION
s
Low forward voltage drop
s
High reliability
s
High surge current capability
s
Soft switching for reduced EMI disturbances
s
Planar technology
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
800
V
V
(RMS)
RMS voltage
560
V
I
F(AV)
Average forward current
Tl = 110C
=0.5
DO-41
1
A
Tl = 130C
=0.5
SMA
1
I
FSM
Forward surge current
t = 8.3 ms
DO-41
25
A
SMA
20
T
stg
Storage temperature range
- 50 + 175
C
Tj
Maximum operating junction temperature
+ 175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
1 A
V
RRM
800 V
Tj (max)
175 C
V
F
(max)
1.25 V
MAIN PRODUCT CHARACTERISTICS
DO-41
STTH108
SMA
STTH108A
STTH108/A
2/5
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
Reverse leakage current
V
R
= 800V
Tj = 25C
5
A
Tj = 125C
50
V
F
Forward voltage drop
I
F
= 1 A
Tj = 25C
1.65
V
Tj = 150C
0.89
1.25
To evaluate the maximum conduction losses use the following equation :
P = 1.05 x I
F(AV)
+ 0.20 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-l)
Junction to lead
L = 10 mm
DO-41
45
C/W
SMA
30
R
th (j-a)
Junction to ambient
L = 10 mm
DO-41
110
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 0.5 A
Irr = 0.25 A I
R
= 1A
Tj = 25C
75
ns
t
fr
Forward recovery time
I
F
= 1 A
dI
F
/dt = 50 A/s
V
FR
= 1.1 x V
F
max
Tj = 25C
200
ns
V
FP
Forward recovery voltage
12
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH108/A
3/5
P(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
(A)
F(AV)
T
=tp/T
tp
= 1
= 0.05
= 0.5
= 0.2
= 0.1
Fig. 1: Conduction losses versus average current.
0.1
1.0
10.0
100.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =150C
(maximum values)
j
T =150C
(typical values)
j
Fig. 2: Forward voltage drop versus forward
current
.
Z
/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t (s)
p
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, L
leads
= 10mm) (DO-41).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
/R
th(j-c)
th(j-c)
t (s)
p
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA).
R
(C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
0
1
2
3
4
5
6
7
8
9
10
S(cm)
Fig. 4-1: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35m)
(DO-41).
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R
(C/W)
th(j-a)
S(cm)
Fig. 4-2: Thermal resistance junction to ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35m)
(SMA).
STTH108/A
4/5
PACKAGE MECHANICAL DATA
SMA
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
2.40
1.65
1.45
1.45
FOOTPRINT (in millimeters)
STTH108/A
5/5
PACKAGE MECHANICAL DATA
DO41
C
A
B
O
/
O
/
D
O
/
D
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
1.102
D
0.712
0.863
0.028
0.034
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH108
STTH108
DO-41
0.34 g
2000
Ammopack
STTH108A
H08
SMA
0.068 g
5000
Tape & reel
STTH108RL
STTH108
DO-41
0.34 g
5000
Tape & reel
s
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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2003 STMicroelectronics - Printed in Italy - All rights reserved.
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