1/7
STTH1302CT/CG/CFP
August 2002 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
I
F(AV)
2 x 6.5 A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.95 V
trr (max)
25 ns
MAIN PRODUCT CHARACTERISTICS
s
Suited for SMPS
s
Low losses
s
Low forward and reverse recovery times
s
High surge current capability
s
High junction temperature
s
Insulated package: TO-220FPAB:
Insulation voltage = 2000 V
DC
Capacitance = 12 pF
FEATURES AND BENEFITS
Dual center tap rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
TO-220AB
STTH1302CT
A1
A2
K
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB /
Tc = 155C
Per diode
6.5
A
D
2
PAK
Tc = 145C
Per device
13
TO-220FPAB
Tc = 135C
Per diode
6.5
A
Tc = 110C
Per device
13
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusodal
70
A
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
D
2
PAK
STTH1302CG
A1
A2
K
TO-220FPAB
STTH1302CFP
A1
A2
K
STTH1302CT/CG/CFP
2/7
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK
Per diode
3
C/W
TO-220FPAB
5.5
TO-220AB / D
2
PAK
Total
1.9
C/W
TO-220FPAB
4.5
R
th (c)
Coupling
TO-220AB / D
2
PAK
0.8
C/W
TO-220FPAB
3.5
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage Current
Tj = 25C
V
R
= V
RRM
6
A
Tj = 125C
3
60
V
F
*
Forward Voltage drop
Tj = 25C
I
F
= 6.5 A
1.1
V
Tj = 125C
I
F
= 6.5 A
0.81
0.95
Tj = 25C
I
F
= 13 A
1.25
Tj = 125C
I
F
= 13 A
0.95
1.1
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.80 x I
F(AV)
+ 0.023 x I
F
2
(RMS)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
Tj = 25C
I
F
= 0.5 A
Irr = 0.25 A
I
R
= 1 A
16
25
ns
tfr
Forward recovery time
Tj = 25C
I
F
= 6.5 A
dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
F
max
70
ns
V
FP
Forward recovery voltage
Tj = 25C
I
F
= 6.5 A
dI
F
/dt = 100 A/s
2.2
V
DYNAMIC CHARACTERISTICS (per diode)
STTH1302CT/CG/CFP
3/7
P
(W)
F(AV)
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
(A)
F(AV)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0.1
1.0
1.E-02
1.E-01
1.E+00
1.E+01
T
=tp/T
tp
tp(s)
= 0.5
= 0.2
= 0.1
Single pulse
Zth
/ Rth
(j-c)
(j-c)
Fig. 4-2:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
(V)
FM
T =125C
Typical values
j
T =25C
Maximum values
j
I
(A)
FM
T =125C
Maximum values
j
Fig. 3: Forward voltage drop versus forward cur-
rent (per diode).
0
10
20
30
40
50
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P=5W
P=2W
P=10W
I (A)
M
T
=tp/T
tp
I
M
Fig. 2: Peak current versus factor (per diode).
Zth
/ Rth
(j-c)
(j-c)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
tp(s)
Fig. 4-1:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /
D
2
PAK).
0
10
20
30
40
50
60
70
80
90
100
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T =25C
C
T =75C
C
T =125C
C
I (A)
M
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward cur-
rent
versus
overload
duration
per
diode
(TO-220AB / D
2
PAK).
STTH1302CT/CG/CFP
4/7
0
10
20
30
40
50
60
70
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T =25C
C
T =75C
C
T =125C
C
I (A)
M
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus
overload
duration
per
diode
(TO-220FPAB).
0
10
20
30
40
50
60
70
80
10
100
1000
trr(ns)
Tj=25C
T =125C
j
I =6.5A
V =100V
F
R
dI /dt(A/s)
F
Fig. 9: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
10
100
1
10
100
1000
V (V)
R
F=1MHz
V
=30V
Tj=25C
OSC
RMS
C(nF)
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
T
(C)
amb
Rth
=Rth
(j-a)
(j-c)
DPAK (S=1cm)
Rth
=50C/W
(j-a)
TO-220AB/DPAK
TO-220FPAB
I
(A)
F(AV)
Fig. 6: Average forward current versus ambient tem-
perature (
=0.5, per diode).
0
20
40
60
80
100
120
140
160
180
200
220
240
10
100
1000
dI /dt(A/s)
F
Q
(nC)
RR
I =6.5A
V =200V
F
R
T =125C
j
Tj=25C
Fig. 8: Reverse recovery charges versus dI
F
/dt
(90% confidence, per diode).
0
2
4
6
8
10
12
10
100
1000
I
(A)
RM
Tj=25C
T =125C
j
I =6.5A
V =100V
F
R
dI /dt(A/s)
F
Fig. 10: Reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
STTH1302CT/CG/CFP
5/7
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
Q
;I
[T ]/Q
;I
[T =125C]
RR RM
j
RR RM
j
T
j(C)
I
RM
Q
RR
I =6.5A
V =100V
F
R
Fig. 11: Dynamic parameters versus junction tem-
perature.
Rth
(C/W)
(j-a)
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
S(cm)
Fig. 12: Thermal resistance junction to ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu = 35m)(D
2
PAK).
PDF 
ZIP