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STTH1506DPI
October 2003 - Ed: 2A
Tandem 600V HYPERFAST BOOST DIODE
The
TURBOSWITCH
"H"
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH "H" family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
DESCRIPTION
s
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
MODE
POWER
FACTOR
CORRECTORS
AND
HARD
SWITCHING
CONDITIONS
s
DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST
RECOVERY
CURRENT
TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
s
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
s
INSULATION
(2500V
RMS
)
ALLOWS
PLACEMENT
ON
SAME
HEATSINK
AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
s
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
s
PACKAGE CAPACITANCE: C=16pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
26
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
130
A
Ipeak
Peak current waveform
= 0.15 Tc = 120C
35
A
T
stg
Storage temperature range
-65 +150
C
Tj
Maximum operating junction temperature
+ 150
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
15 A
V
RRM
600 V
Tj (max)
150 C
V
F
(max)
2.4 V
I
RM
(typ.)
4.8 A
t
rr
(typ.)
16 ns
MAJOR PRODUCTS CHARACTERISTICS
1
2
1
2
DOP3I
(insulated)
STTH1506DPI
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
V
R
= V
RRM
Tj = 25C
20
A
Tj = 125C
30
200
V
F
**
Forward voltage drop
I
F
= 15 A
Tj = 25
C
3.6
V
Tj = 150C
1.95
2.4
Pulse test: * tp = 100ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.7 x I
F(AV)
+ 0.047 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Test conditions
Value
Unit
R
th (j-c)
Junction to case
1.6
C/W
THERMAL AND POWER DATA
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
I
F
= 0.5 A Irr = 0.25A
I
R
= 1 A
Tj = 25C
16
ns
I
F
= 1 A dI
F
/dt = - 50A/s
V
R
= 30 V
35
I
RM
Reverse recovery
current
V
R
= 400 V I
F
= 15 A
dI
F
/dt = -200 A/s
Tj = 125C
4.8
6.0
A
S
Reverse recovery
softness factor
0.4
-
Q
rr
Reverse recovery
charges
80
nC
RECOVERY CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
fr
Forward
recovery time
I
F
= 15 A dI
F
/dt = 100A/s,
V
FR
= 1.1 x V
F
max
Tj = 25C
200
ns
V
FP
Forward
recovery voltage
I
F
= 15 A dI
F
/dt = 100 A/s
Tj = 25C
6
V
TURN-ON SWITCHING CHARACTERISTICS
STTH1506DPI
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0
5
10
15
20
25
30
35
40
45
50
55
0
2
4
6
8
10
12
14
16
18
20
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
P(W)
I
(A)
F(AV)
Fig. 1: Conduction losses versus average current.
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
1
2
3
4
5
6
7
8
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 2: Forward voltage drop versus forward
current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Z
/R
th(j-c)
th(j-c)
t (s)
p
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
I
(A)
RM
0
2
4
6
8
10
12
14
16
18
20
0
200
400
600
800
1000
dI /dt(A/s)
F
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
I =2 x I
F
F(AV)
V =400V
T =125C
R
j
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(typical values).
t (ns)
rr
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
Fig. 5: Reverse recovery time versus dI
F
/dt
(typical values).
Q (nC)
rr
0
20
40
60
80
100
120
140
160
180
200
220
240
0
200
400
600
800
1000
V =400V
T =125C
R
j
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
Fig. 6: Reverse recovery charges versus dI
F/
dt
(typical values).
STTH1506DPI
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0.20
0.30
0.40
0.50
0.60
0.70
0.80
0
200
400
600
800
1000
S
I =I
T =125C
F
F(AV)
j
V =400V
R
dI /dt(A/s)
F
Fig. 7: Softness factor versus dI
F
/dt (typical
values).
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
I
RM
S
Fig. 8: Relative variations of dynamic parameters
versus junction temperature.
0
1
2
3
4
5
6
7
8
9
10
11
12
0
50
100
150
200
250
300
350
400
450
500
V
(V)
FP
I =I
T =125C
F
F(AV)
j
dI /dt(A/s)
F
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (typical values).
0
50
100
150
200
250
300
350
0
100
200
300
400
500
t (ns)
fr
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
dI /dt(A/s)
F
Fig. 10: Forward recovery time versus dI
F
/dt
(typical values).
10
100
1000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
STTH1506DPI
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH1506DPI
STTH1506DPI
DOP3I
4.46 g.
30
Tube
s
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics - All rights reserved.
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PACKAGE MECHANICAL DATA
DOP3I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5
0.622
0.650
G
20.4
21.1
0.815
0.831
H
15.1
15.5
0.594
0.610
K
3.4
3.65
0.134
0.144
L
4.08
4.17
0.161
0.164
N
10.8
11.3
0.425
0.444
P
1.20
1.40
0.047
0.055
R
4.60 typ.
0.181 typ.
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