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STTH152
November 2001 - Ed:1A
HIGH EFFICIENCY ULTRAFAST DIODE
The STTH152 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Very low conduction losses
s
Negligible switching losses
s
Low forward and reverse recovery times
s
High junction temperature
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(AV)
Average forward current
TI = 115C
= 0.5
1.5
A
I
FSM
Surge non repetitive forward current
tp=10 ms Sinusoidal
80
A
T
stg
Storage temperature range
-65 +175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
1.5 A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.75 V
trr(max)
32 ns
MAIN PRODUCT CHARACTERISTICS
DO-15
STTH152
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient*
45
C/W
* On infinite heatsink with 10mm lead length.
THERMAL RESISTANCES
STTH152
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
1.5
A
Tj = 125C
2
40
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 1.5A
0.95
V
Tj = 125C
0.66
0.75
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.60 x I
F(AV)
+ 0.10 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
I
F
= 1A dI
F
/dt = -50A/s
V
R
= 30V
Tj = 25C
32
ns
tfr
Forward recovery
time
I
F
= 1.5A dI
F
/dt = 50A/s
V
FR
= 1.1 x V
F
max
Tj = 25C
50
ns
V
FP
Forward recovery
voltage
Tj = 25C
1.8
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH152
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0
10
20
30
40
50
60
70
80
90
100
110
5
10
15
20
25
Lleads(mm)
Rth(j-a)
Rth(j-l)
Rth(C/W)
Fig. 3: Thermal resistance versus lead length.
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VFM(V)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
IFM(A)
Fig. 5: Forward voltage drop versus forward
current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
Zth(j-a)/Rth(j-a)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads = 10mm).
1
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IF(av)(A)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
PF(av)(W)
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Tamb(C)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100C:W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
STTH152
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1.0
1.5
2.0
2.5
3.0
3.5
25
50
75
100
125
150
175
Tj(C)
IRM
Qrr
trr
IF=1.5A
dIF/dt=200A/s
VR=100V
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25C]
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
0
10
20
30
40
50
60
70
80
90
1
10
100
1000
dIF/dt(A/s)
IF=1.5A
VR=100V
Tj=125C
Tj=25C
trr(ns)
Fig. 7: Reverse recovery time versus dI
F
/dt (90%
confidence).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
1000
dIF/dt(A/s)
IF=1.5A
VR=100V
Tj=125C
Tj=25C
IRM(A)
Fig. 8: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
STTH152
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH152
STTH152
DO-15
0.4 g
1000
Ammopack
STTH152RL
STTH152
DO-15
0.4 g
6000
Tape and reel
s
White band indicates cathode
s
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
DO-15
A
C
C
D
B
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
0.035
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