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STTH2002C
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK, TO-220FPAB
and I
2
PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
Suited for SMPS
Low losses
Low forward and reverse recovery times
Low leakage current
High junction temperature
Insulated package: TO-220FPAB
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward
current
=0.5
TO-220AB / I
2
PAK /
D
2
PAK
Tc = 150C
Per diode
10
A
Tc = 140C
Per device
20
Tc = 130C
Per diode
15
Tc = 115C
Per device
30
TO-220FPAB
Tc = 120C
Per diode
10
Tc = 95C
Per device
20
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
90
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
Up to 2 x 15A
V
RRM
200 V
Tj (max)
175 C
V
F
(typ)
0.78 V
t
rr
(typ)
22 ns
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
I
2
PAK
STTH2002CR
A1
A2
K
TO-220AB
STTH2002CT
A1
A2
K
A1
A2
K
K
D
2
PAK
STTH2002CG
A1
A2
K
TO-220FPAB
STTH2002CFP
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
10
A
Tj = 125C
6
100
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 10 A
1.1
V
Tj = 25C
I
F
= 20 A
1.25
Tj = 150C
I
F
= 10 A
0.78
0.89
Tj = 150C
I
F
= 20 A
1.05
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.016 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Maximum
Unit
R
th (j-c)
Junction to case
TO-220AB / I
2
PAK / D
2
PAK
Per diode
2.5
C/W
Per device
1.6
TO-220FPAB
Per diode
5
Per device
3.8
R
th (j-c)
Coupling
TO-220AB / I
2
PAK / D
2
PAK
0.7
C/W
TO-220FPAB
2.5
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 1 A V
R
= 30V
dI
F
/dt = 100 A/s
22
27
ns
I
RM
Reverse
recovery current
Tj = 125C
I
F
= 10 A V
R
= 160V
dI
F
/dt = 200 A/s
7.0
9.0
A
t
fr
Forward
recovery time
Tj = 25C
I
F
= 10 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
F
max
200
ns
V
FP
Forward
recovery voltage
Tj = 25C
I
F
= 10 A dI
F
/dt = 100 A/s
2.4
V
DYNAMIC ELECTRICAL CHARACTERISTICS
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0
10
20
30
40
50
60
70
80
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I (A)
M
T
=tp/T
tp
I
M
P = 20W
P = 10W
P = 5W
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
(V)
FM
I
(A)
FM
T =25C
j
T =150C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
Z
/R
th(j-c)
th(j-c)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
t (s)
p
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
I
2
PAK, D
2
PAK).
10
100
0
50
100
150
200
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
FM
V
(V)
FM
T =25C
j
T =150C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
0.0
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
/R
th(j-c)
th(j-c)
Single pulse
t (s)
p
Fig. 3-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220FPAB).
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0
10
20
30
40
50
60
70
80
10
100
1000
t (ns)
rr
T =25C
j
T =125C
j
dI /dt(A/s)
F
I =10A
F
V =160V
R
Fig. 6: Reverse recovery time versus dI
F
/dt
(typical values, per diode).
0
2
4
6
8
10
12
14
16
10
100
1000
I
(A)
RM
T =25C
j
T =125C
j
dI /dt(A/s)
F
I =10A
F
V =160V
R
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
I
RM
Q
rr
T (C)
j
Q ;
rr
I
[T ]/Q ;I
[T =125C]
RM
j
rr RM
j
I =10A
F
V =160V
R
Fig. 8:
Dynamic parameters versus junction
temperature.
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
S(Cu)(cm)
R
(C/W)
th(j-a)
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
CU
: 35m) for D
2
PAK.
0
50
100
150
200
250
300
10
100
1000
Q (nC)
rr
dI /dt(A/s)
F
I =10A
F
V =160V
R
T =125C
j
T =25C
j
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH2002CT
STTH2002CT
TO-220AB
2.23 g
50
Tube
STTH2002CG
STTH2002CG
D
2
PAK
1.48 g
50
Tube
STTH2002CG-TR
STTH2002CG
D
2
PAK
1.48 g
1000
Tape & reel
STTH2002CR
STTH2002CR
I
2
PAK
1.49 g
50
Tube
STTH2002CFP
STTH2002CFP
TO-220FPAB
1.70g
50
Tube
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