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STTH3006DPI
October 2003 - Ed: 2A
Tandem 600V HYPERFAST BOOST DIODE
The
TURBOSWITCH
"H"
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH "H" family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
DESCRIPTION
s
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
MODE
POWER
FACTOR
CORRECTORS
AND
HARD
SWITCHING
CONDITIONS
s
DESIGNED FOR HIGH dI
F
/dt OPERATION.
HYPERFAST
RECOVERY
CURRENT
TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
s
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
s
INSULATION
(2500V
RMS
)
ALLOWS
PLACEMENT
ON
SAME
HEATSINK
AS
MOSFET
FLEXIBLE
HEATSINKING
ON
COMMON OR SEPARATE HEATSINK.
s
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
s
PACKAGE CAPACITANCE: C=16pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
32
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
Ipeak
Peak current waveform
= 0.15 Tc = 120C
50
A
T
stg
Storage temperature range
-65 +150
C
Tj
Maximum operating junction temperature
+ 150
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
30 A
V
RRM
600 V
Tj (max)
150 C
V
F
(max)
2.4 V
I
RM
(typ.)
6.7 A
t
rr
(typ.)
25 ns
MAJOR PRODUCTS CHARACTERISTICS
1
2
1
2
DOP3I
(insulated)
STTH3006DPI
2/5
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
V
R
= V
RRM
Tj = 25C
40
A
Tj = 125C
60
400
V
F
**
Forward voltage drop
I
F
= 30 A
Tj = 25
C
3.6
V
Tj = 150C
1.95
2.4
Pulse test : * tp = 100 ms,
< 2 %
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.7 x I
F(AV)
+ 0.023 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Value
Unit
R
th (j-c)
Junction to case thermal resistance
1.3
C/W
THERMAL AND POWER DATA
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
I
F
= 0.5 A
Irr = 0.25 A
I
R
= 1 A
Tj = 25C
25
ns
I
F
= 1 A
dI
F
/dt = - 50 A/s
V
R
= 30 V
45
I
RM
Reverse recovery
current
V
R
= 400 V I
F
= 30 A
dI
F
/dt = -200 A/s
Tj = 125C
6.7
8.5
A
S
Reverse recovery
softness factor
0.3
-
Q
rr
Reverse recovery
charges
145
nC
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
fr
Forward recovery
time
I
F
= 30 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
F
max
Tj = 25C
400
ns
V
FP
Transient peak
forward recovery
voltage
I
F
= 30 A dI
F
/dt = 100 A/s Tj = 25C
6
V
TURN-ON SWITCHING CHARACTERISTICS
STTH3006DPI
3/5
P(W)
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
35
40
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 1
= 0.5
Fig. 1: Conduction losses versus average current.
I
(A)
FM
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
4
5
6
7
8
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 2: Forward voltage drop versus forward
current.
Z
/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
t (s)
p
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
t (ns)
rr
0
10
20
30
40
50
60
70
80
90
0
50
100
150
200
250
300
350
400
450
500
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
Fig. 5:
Reverse recovery time versus dI
F
/dt
(typical values).
I
(A)
RM
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
I =2 x I
F
F(AV)
I =I
F
F(AV)
V =400V
T =125C
R
j
dI /dt(A/s)
F
Fig. 4:
Peak reverse recovery current versus
dI
F
/dt (typical values).
Q (nC)
rr
0
25
50
75
100
125
150
175
200
225
250
275
300
0
50
100
150
200
250
300
350
400
450
500
dI /dt(A/s)
F
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
Fig. 6: Reverse recovery charges versus dI
F
/dt
(typical values).
STTH3006DPI
4/5
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
25
50
75
100
125
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
I
RM
S
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125C).
0
1
2
3
4
5
6
7
8
9
10
11
12
0
50
100
150
200
250
300
350
400
450
500
V
(V)
FP
I =I
T =125C
F
F(AV)
j
dI /dt(A/s)
F
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (typical values).
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
Fig. 10:
Forward recovery time versus dI
F
/dt
(typical values).
S
0.20
0.25
0.30
0.35
0.40
0
50
100
150
200
250
300
350
400
450
500
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V =400V
R
Fig. 7: Reverse recovery softness factor versus
dI
F
/dt (typical values).
C(pF)
10
100
1000
1
10
100
1000
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
V (V)
R
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
STTH3006DPI
5/5
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH3006DPI
STTH3006DPI
DOP3I
4.46 g.
30
Tube
s
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics - All rights reserved.
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PACKAGE MECHANICAL DATA
DOP3I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55
0.057
0.061
C
14.35
15.60
0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5
0.622
0.650
G
20.4
21.1
0.815
0.831
H
15.1
15.5
0.594
0.610
K
3.4
3.65
0.134
0.144
L
4.08
4.17
0.161
0.164
N
10.8
11.3
0.425
0.444
P
1.20
1.40
0.047
0.055
R
4.60 typ.
0.181 typ.
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