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STTH302
November 2001 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
DO-201AD
STTH302
s
Very low conduction losses
s
Negligible switching losses
s
Low forward and reverse recovery times
s
High junction temperature
FEATURES AND BENEFITS
The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F (AV)
Average forward current
TI = 107C
= 0.5
3
A
I
FSM
Surge non repetitive forward current
t
p
= 10ms
Sinusoidal
130
A
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.75 V
trr (max)
35 ns
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction-ambient*
25
C/W
* On infinite heatsink with 10mm lead length.
THERMAL PARAMETERS
STTH302
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
T
j
= 25C
V
R
= V
RRM
3
A
T
j
= 125C
4
75
V
F
**
Forward voltage drop
T
j
= 25C
I
F
= 3A
0.95
V
T
j
= 125C
0.66
0.75
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
To evaluate the maximum conduction losses use the following equations:
P = 0.60 x I
F(AV)
+ 0.05 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
I
F
= 1A dI
F
/dt = - 50A/
s
V
R
= 30V
T
j
= 25C
35
ns
tfr
Forward recovery
time
I
F
= 3A dI
F
/dt = 50A/
s
V
FR
= 1.1 x V
F
max
T
j
= 25C
70
ns
V
FP
Forward recovery
voltage
T
j
= 25C
1.6
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH302
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
T
=tp/T
tp
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
175
Tamb(C)
Rth(j-a)=Rth(j-l)
Rth(j-a)=75C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
0
10
20
30
40
50
60
70
80
90
5
10
15
20
25
Lleads(mm)
Rth(j-a)
Rth(j-l)
Rth(C/W)
Fig. 3: Thermal resistance versus lead length.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Zth(j-a)/Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads = 10mm).
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VFM(V)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
IFM(A)
Fig. 5: Forward voltage drop versus forward
current.
STTH302
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0
1
2
3
4
5
6
1
10
100
1000
dIF/dt(A/s)
IF=3A
VR=100V
Tj=125C
Tj=125C
Tj=25C
IRM(A)
Fig. 8: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
10
20
30
40
50
60
70
80
90
100
1
10
100
1000
dIF/dt(A/s)
IF=3A
VR=100V
Tj=125C
Tj=125C
Tj=25C
trr(ns)
Fig. 7: Reverse recovery time versus dI
F
/dt (90%
confidence).
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25
50
75
100
125
150
175
Tj(C)
IRM
Qrr
trr
IF=3A
dIF/dt=200A/s
VR=100V
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25C]
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
STTH302
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PACKAGE MECHANICAL DATA
DO-201AD
B
A
E
E
D
D
C
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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2001 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH302
STTH302
DO-201AD
1.16 g
600
Ammopack
STTH302RL
STTH302
DO-201AD
1.16 g
1900
Tape and reel
s
White band indicates cathode
s
Epoxy meets UL94,V0
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