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STTH5L06D/B/FP
November 2002 - Ed: 4B
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH5L06D/B/FP, which is using ST Turbo 2
600V technology, is specially suited as boost
diode in discontinuous or critical mode power
factor corrections.
The device, available in TO-220AC, TO-220FPAC
and DPAK, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Ultrafast switching
s
Low reverse recovery current
s
Reduces switching & conduction losses
s
Low thermal resistance
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
TO-220AC/TO-220FPAC
DPAK
20
10
A
I
F(AV)
Average forward
current
TO-220AC / DPAK
Tc = 150C
=0.5
5
A
TO-220FPAC
Tc = 135C
=0.5
I
FSM
Surge non
repetitive forward
current
tp = 10 ms Sinusoidal
tp = 10 ms Sinusoidal
TO-220AC/TO-220FPAC
DPAK
90
60
A
T
stg
Storage temperature range
- 65 + 175
C
T
j
Maximum operating junction temperature
+ 175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
5 A
V
RRM
600 V
I
R
(max)
125 A
Tj (max)
175 C
V
F
(max)
1.05 V
trr (max)
95 ns
MAIN PRODUCT CHARACTERISTICS
K
A
TO-220AC
STTH5L06D
NC
A
K
DPAK
STTH5L06B
K
A
TO-220FPAC
STTH5L06FP
STTH5L06D/B/FP
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
Reverse leakage
current
V
R
= 600V
T
j
= 25C
5
A
T
j
= 150C
10
125
V
F
Forward voltage drop
I
F
= 5 A
T
j
= 25C
1.3
V
T
j
= 150C
0.85
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.89 x I
F(AV)
+ 0.033 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th(j-c)
Junction to case
TO-220AC / DPAK
3.5
C/W
TO-220FPAC
6.0
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
I
F
= 1 A dI
F
/dt = - 50 A/s
V
R
= 30V
T
j
= 25C
65
95
ns
t
fr
Forward recovery
time
I
F
= 5 A dI
F
/dt = 100 A/
s
V
FR
= 1.1 x V
F
max
T
j
= 25C
150
ns
V
FP
Forward recovery
time
I
F
= 5 A dI
F
/dt = 100 A/
s
T
j
= 25C
7
V
DYNAMIC ELECTRICAL CHARACTERISTICS
0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
P(W)
I
(A)
F(AV)
Fig. 1: Conduction losses versus average current.
0.1
1.0
10.0
100.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =150C
(maximum values)
j
T =150C
(typical values)
j
Fig. 2: Forward voltage drop versus forward
current
.
STTH5L06D/B/FP
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Z
/R
th(j-c)
th(j-c)
t (s)
p
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC,
DPAK).
0
100
200
300
400
500
600
700
800
900
1000
0
10
20
30
40
50
60
70
80
90
100
t (ns)
rr
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
Fig. 5:
Reverse recovery time versus dI
F
/dt
(90% confidence).
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
100
I
(A)
RM
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
V =400V
T =125C
R
j
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
50
100
150
200
250
300
350
400
450
500
0
10
20
30
40
50
60
70
80
90
100
Q (nC)
rr
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
dI /dt(A/s)
F
Fig. 6: Reverse recovery charges versus dI
F
/dt
(90% confidence).
Z
/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
t (s)
p
Fig. 3-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220FPAC).
0
10
20
30
40
50
60
70
80
90
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
S factor
I =I
T =125C
F
F(AV)
j
V =400V
R
dI /dt(A/s)
F
Fig. 7: Softness factor versus dI
F
/dt (typical
values).
STTH5L06D/B/FP
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0.00
0.25
0.50
0.75
1.00
1.25
25
50
75
100
125
I
RM
Q
RR
S factor
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
Fig.
8:
Relative
variations
of
dynamic
parameters versus junction temperature.
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
180
200
V
(V)
FP
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
160
180
200
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
Fig. 10:
Forward recovery time versus dI
F
/dt
(90% confidence).
1
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
j
Fig. 11:
Junction capacitance versus reverse
voltage applied (typical values).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
S(Cu)(cm)
R
(C/W)
th(j-a)
Fig. 12:
Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed circuit
board FR4, copper thickness: 35m) (DPAK).
STTH5L06D/B/FP
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PACKAGE MECHANICAL DATA
DPAK
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
6.7
6.7
3
3
1.6
1.6
2.3
2.3
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