1/9
Table 1: Main Product Characteristics
I
F(AV)
5 A
V
RRM
600 V
T
j
175C
V
F
(typ)
1.4 V
t
rr
(max)
40 ns
STTH5R06
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward voltage
TO-220AC / TO-220FPAC / D
2
PAK
20
A
DPAK
10
I
F(AV)
Average forward current
TO-220AC / DPAK
/ D
2
PAK
Tc = 135C
= 0.5
5
A
TO-220FPAC
Tc = 105C
= 0.5
5
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
50
A
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature
175
C
K
A
TO-220AC
STTH5R06D
K
A
TO-220FPAC
STTH5R06FP
K
A
NC
D
2
PAK
STTH5R06G
K
A
NC
DPAK
STTH5R06B
September 2004
REV. 4
FEATURES AND BENEFITS
Ultrafast switching
Low reverse recovery current
Low thermal resistance
Reduces switching losses
DESCRIPTION
The STTH5R06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
continuous mode power factor corrections and
hard switching conditions. This device is also
intended for use as a free wheeling diode in power
supplies and other power switching applications.
Table 2: Order Codes
Part Number
Marking
STTH5R06D
STTH5R06D
STTH5R06FP
STTH5R06FP
STTH5R06B
STTH5R06B
Part Number
Marking
STTH5R06B-TR
STTH5R06B
STTH5R06G
STTH5R06G
STTH5R06G-TR
STTH5R06G
STTH5R06
2/9
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation: P = 1.164 x I
F(AV)
+ 0.128 I
F
2
(RMS)
Table 6: Dynamic Characteristics
Symbol
Parameter
Value (max).
Unit
R
th(j-c)
Junction to case
TO-220AC / DPA / D
2
PAK
3.0
C/W
TO-220FPAC
5.5
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
*
Reverse leakage current T
j
= 25C
V
R
= V
RRM
20
A
T
j
= 125C
25
250
V
F
**
Forward voltage drop
T
j
= 25C
I
F
= 5A
2.9
V
T
j
= 125C
1.4
1.8
Symbol
Parameter
Test conditions
Min.
Typ Max.
Unit
t
rr
Reverse recovery
time
T
j
= 25C
I
F
= 0.5A Irr = 0.25A I
R
=1A
25
ns
I
F
= 1A dI
F
/dt = -50 A/s V
R
=30V
40
I
RM
Reverse recovery
current
T
j
= 125C I
F
= 5A V
R
= 400V
dI
F
/dt = -200 A/s
5.0
6.0
A
S factor Softness factor
0.35
Qrr
Reverse recovery
charges
110
nC
t
fr
Forward recovery
time
T
j
= 25C
I
F
= 5A dI
F
/dt = 40 A/s
V
FR
= 1.1 x V
Fmax
150
ns
V
FP
Forward recovery
voltage
T
j
= 25C
I
F
= 5A dI
F
/dt = 40 A/s
V
FR
= 1.1 x V
Fmax
4.5
V
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0
1
2
3
4
5
6
7
P(W)
T
=tp/T
tp
= 0.05 = 0.1
= 0.2
= 0.5
= 1
I
(A)
F(AV)
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
STTH5R06
3/9
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC, DPAK, D
2
PAK)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC)
Figure 5: Peak reverse recovery current versus
dI
F
/dt (90% confidence)
Figure 6: Reverse recovery time versus dI
F
/dt
(90% confidence)
Figure 7: Reverse recovery charges versus
dI
F
/dt (90% confidence)
Figure 8: Softness factor versus dI
F
/dt (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Z
/R
th(j-c)
th(j-c)
t (s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Z
/R
th(j-c)
th(j-c)
t (s)
p
0
2
4
6
8
10
12
14
16
18
20
22
0
200
400
600
800
1000
I
(A)
RM
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
V =400V
T =125C
R
j
0
10
20
30
40
50
60
70
80
0
200
400
600
800
1000
t (ns)
rr
dI /dt(A/s)
F
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
0
50
100
150
200
250
300
350
0
200
400
600
800
1000
Q (nC)
rr
V =400V
T =125C
R
j
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0
200
400
600
800
1000
S factor
I =I
T =125C
F
F(AV)
j
V =400V
R
dI /dt(A/s)
F
STTH5R06
4/9
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dI
F
/dt (90% confidence)
Figure 11: Forward recovery time versus dI
F
/dt
(90% confidence)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, e
CU
=35m) (DPAK and D
2
PAK)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
I
RM
Q
RR
S factor
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
0
2
4
6
8
10
12
14
16
18
20
0
100
200
300
400
500
V
(V)
FP
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
0
20
40
60
80
100
120
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
S(Cu)(cm)
R
(C/W)
th(j-a)
STTH5R06
5/9
Figure 14: DPAK Package Mechanical Data
Figure 15: DPAK Foot Print Dimensions
(in millimeters)
6.7
6.7
3
3
1.6
1.6
2.3
2.3
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
PDF 
ZIP