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STTH506TTI
June 2003 - Ed: 1A
Tandem 600V HYPERFAST RECTIFIER
The
TURBOSWITCH
"H"
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH "H" family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
DESCRIPTION
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
MODE
POWER
FACTOR
CORRECTORS
AND
HARD
SWITCHING
CONDITIONS
DESIGNED FOR HIGH dI
F
/dt OPERATION.
HYPERFAST
RECOVERY
CURRENT
TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
INSULATION
(2500V
RMS
)
ALLOWS
PLACEMENT
ON
SAME
HEATSINK
AS
MOSFET
FLEXIBLE
HEATSINKING
ON
COMMON OR SEPARATE HEATSINK.
MATCHED
DIODES
FOR
TYPICAL
PFC
APPLICATION
WITHOUT
NEED
FOR
VOLTAGE BALANCE NETWORK
Package Capacitance: C=7pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
14
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
60
A
T
stg
Storage temperature range
-65 +150
C
Tj
Maximum operating junction temperature
+ 150
C
ABSOLUTE RATINGS (limiting values, for both diodes)
I
F(AV)
5 A
V
RRM
600 V (in series)
Tj (max)
150 C
V
F
(max)
2.6 V
I
RM
(typ.)
3.6 A
MAJOR PRODUCTS CHARACTERISTICS
1
2
3
1
2
3
Insulated TO-220AB
TM: TURBOSWITCH is a trademark of STMicroelectronics
STTH506TTI
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Symbol
Parameter
Test conditions
Value
Unit
R
th (j-c)
Junction to case thermal resistance
Total
3.0
C/W
P
Conduction power dissipation for
both diodes
I
F(AV)
= 5 A
= 0.5
Tc = 100C
17
W
THERMAL AND POWER DATA
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
V
R
= V
RRM
Tj = 25C
6
A
Tj = 125C
8
60
V
F
**
Forward voltage drop
I
F
= 5 A
Tj = 25
C
3.6
V
Tj = 125C
2.1
2.6
Pulse test : * tp = 100 ms,
< 2 %
** tp = 380
s, < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x I
F(AV)
+ 0.16 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
I
F
= 0.5 A
Irr = 0.25 A
I
R
= 1 A
Tj = 25C
12
ns
I
F
= 1 A
dI
F
/dt = - 50 A/s
V
R
= 30 V
25
I
RM
Reverse recovery
current
V
R
= 400 V I
F
= 5 A
dI
F
/dt = -200 A/s
Tj = 125C
3.8
4.5
A
S
Reverse recovery
softness factor
0.4
-
DYNAMIC CHARACTERISTICS (for both diodes)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
t
fr
Forward recovery
time
I
F
= 5 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
F
max
Tj = 25C
100
ns
V
FP
Transient peak
forward recovery
voltage
I
F
= 5 A dI
F
/dt = 100 A/s
Tj = 25C
7
V
TURN-ON SWITCHING CHARACTERISTICS (for both diodes)
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P(W)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
I
(A)
F(AV)
T
=tp/T
tp
= 1
= 0.05
= 0.1
= 0.2
= 0.5
Fig. 1: Conduction losses versus average current.
I
(A)
FM
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
V
(V)
FM
Fig. 2: Forward voltage drop versus forward
current.
Z
/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
=tp/T
tp
t (s)
p
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
t (ns)
rr
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
250
300
350
400
450
500
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
dI /dt(A/s)
F
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
I
(A)
RM
0
1
2
3
4
5
6
7
8
9
0
50
100
150
200
250
300
350
400
450
500
V =400V
T =125C
R
j
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
I =2 x I
F
F(AV)
dI /dt(A/s)
F
Fig. 4:
Peak reverse recovery current versus
dI
F
/dt (90% confidence).
Q (nC)
rr
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
dI /dt(A/s)
F
Fig. 6: Reverse recovery charges versus dI
F
/dt
(90% confidence).
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0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
I
RM
S
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125C).
V
(V)
FP
0
2
4
6
8
10
12
14
16
18
20
0
50
100
150
200
250
300
350
400
450
500
I =I
T =125C
F
F(AV)
j
dI /dt(A/s)
F
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
t (ns)
fr
0
20
40
60
80
100
120
140
160
180
200
0
100
200
300
400
500
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
dI /dt(A/s)
F
Fig. 10: Forward recovery time versus dI
F
/dt (90%
confidence).
S
0.20
0.30
0.40
0.50
0.60
0
50
100
150
200
250
300
350
400
450
500
I =I
T =125C
F
F(AV)
j
V =400V
R
dI /dt(A/s)
F
Fig. 7: Reverse recovery softness factor versus
dI
F
/dt (typical values).
C(pF)
1
10
100
1
10
100
1000
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH506TTI
STTH506TTI
TO-220AB
2.3 g.
50
Tube
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
PACKAGE MECHANICAL DATA
TO-220AB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
15.20
15.90 0.598
0.625
a1
3.50
4.20 0.137
0.165
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88 0.024
0.034
b2
1.23
1.32 0.048
0.051
C
4.40
4.60 0.173
0.181
c1
0.49
0.70 0.019
0.027
c2
2.40
2.72 0.094
0.107
e
2.40
2.70 0.094
0.106
F
6.20
6.60 0.244
0.259
I
3.75
3.85 0.147
0.151
I4
16.40
0.646
L
2.65
2.95 0.104
0.116
l2
1.14
1.70 0.044
0.066
l3
1.14
1.70 0.044
0.066
M
2.60
0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
e
c1
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