STU13NB60
N-CHANNEL ENHANCEMENT MODE
PowerMESH
TM
MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.4
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process,
SGS-Thomson
has
designed
an
advanced
family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Volt age (V
GS
= 0)
600
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
G S
Gat e-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
12.6
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
7.9
A
I
DM
(
)
Drain Current (pulsed)
50.4
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
160
W
Derating F act or
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ ns
T
stg
Storage T emperat ure
-65 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
13A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
October 1997
TYPE
V
DSS
R
DS(on)
I
D
STU13NB60
600 V
< 0.45
12.6 A
1
2
3
Max220
1/6
THERMAL DATA
R
t hj-ca se
Rthj -am b
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
o
C/ W
oC/W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
12.6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
800
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
@ 100
o
C
600
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
=6.3 A
0.4
0.45
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
12. 6
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
=6.3 A
6
9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
2950
370
33
3840
480
43
pF
pF
pF
STU13NB60
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
I
D
= 6.3 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
30
14
42
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V
I
D
=12. 6 A V
GS
= 10 V
65
18
27
91
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
I
D
= 12.6 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
21
18
32
29
25
45
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
12.6
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 12.6 A
V
G S
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12.6 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
820
9.6
23. 5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STU13NB60
3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
STU13NB60
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.2
2.4
0.087
0.094
A2
2.9
3.1
0.114
0.122
b
0.7
0.93
0.027
0.036
b1
1.25
1.4
0.049
0.055
b2
1.2
1.38
0.047
0.054
c
0.45
0.6
0.18
0.023
D
15.9
16.3
0.626
0.641
D1
9
9.35
0.354
0.368
D2
0.8
1.2
0.031
0.047
D3
2.8
3.2
0.110
0.126
e
2.44
2.64
0.096
0.104
E
10.05
10.35
0.396
0.407
L
13.2
13.6
0.520
0.535
L1
3
3.4
0.118
0.133
A
A2
A1
C
D3
D1
D2
D
b1
b2
b
E
L
L1
e
P011R
Max220 MECHANICAL DATA
STU13NB60
5/6
PDF 
ZIP