1/11
February 2002
STW26NM50
STU26NM50, STU26NM50I
N-CHANNEL 500V - 0.10
- 26A TO-247,Max220,Max220I
Zener-Protected MDmesh
TM
Power MOSFET
n
TYPICAL R
DS
(on) = 0.10
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
IMPROVED ESD CAPABILITY
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh
TM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESH
TM
horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmesh
TM
family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
STW26NM50
STU26NM50
STU26NM50I
500 V
500 V
500 V
< 0.120
< 0.120
< 0.120
30 A
26 A
26 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STW26NM50
W26NM50
TO-247
TUBE
STU26NM50
U26NM50
Max220
TUBE
STU26NM50I
U26NM50I
Max220I
TUBE
TO-247
1
2
3
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
STW26NM50, STU26NM50, STU26NM50I
2/11
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limi ted by safe operating area
(1) I
SD
26A, di/dt
200A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
STW 26NM50
STU26NM50
STU26NM50I
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25
C
30
26
26 (*)
A
I
D
Drain Current (continuos) at T
C
= 100
C
18.9
16.38
16.38 (*)
A
I
DM
(
l
)
Drain Current (pulsed)
120
104
104 (*)
A
P
TOT
Total Dissipation at T
C
= 25
C
313
192
73
W
Derating Factor
2.5
1.54
0.58
W/
C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
C
C
TO-247
Max220
Max220I
Rthj-case
Thermal Resistance Junction-case Max
0.4
0.65
1.7
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
13
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
740
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igss=
1mA (Open Drain)
30
V
3/11
STW26NM50, STU26NM50, STU26NM50I
ELECTRICAL CHARACTERISTICS (TCASE =25
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
C
10
100
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 13 A
0.1
0.12
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 13 A
20
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3000
700
50
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 250 V, I
D
= 13 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
28
25
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 26 A,
V
GS
= 10V
76
20
36
106
nC
nC
nC
Symbol
Parameter
Test Condition s
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400V, I
D
= 26 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
13
19
36
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
26
104
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 26 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 26 A, di/dt = 100A/
s
V
DD
= 60V, T
j
= 150
C
(see test circuit, Figure 5)
400
5.5
27
ns
C
A
STW26NM50, STU26NM50, STU26NM50I
4/11
Safe Operating Area For TO-247
Thermal Impedance For TO-247
Thermal Impedance For Max220
Safe Operating Area For Max220
Thermal Impedance For Max220I
Safe Operating Area For Max220I
5/11
STW26NM50, STU26NM50, STU26NM50I
Capacitance Variations
Gate Charge vs Gate-source Voltage
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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