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May 2001
STU7NB90
STU7NB90I
N-CHANNEL 900V - 1.1
- 7.3 A Max220/Max220I
PowerMeshTM MOSFET
s
TYPICAL R
DS
(on) = 1.1
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STU7NB90
900 V
< 1.45
7.3 A
STU7NB90I
900 V
< 1.45
7.3 A
Symbol
Parameter
Value
Unit
STU7NB90
STU7NB90I
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
900
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
7.3
7.3 (*)
A
I
D
Drain Current (continuos) at T
C
= 100C
4.6
4.6 (*)
A
I
DM
(
q
)
Drain Current (pulsed)
29.2
29.2 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
170
60
W
Derating Factor
1.36
0.47
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1) I
SD
7.3 A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Current Limited by Package
INTERNAL SCHEMATIC DIAGRAM
Max220
Max220I
1
2
3
STU7NB90 - STU7NB90I
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Max220
Max220I
Rthj-case
Thermal Resistance Junction-case Max
0.734
2.1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7.3
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
900
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 4 A
1.1
1.45
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4 A
8
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2120
pF
C
oss
Output Capacitance
225
pF
C
rss
Reverse Transfer
Capacitance
23
pF
3/9
STU7NB90 - STU7NB90I
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 450 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
25
ns
t
r
Rise Time
12
ns
Q
g
Total Gate Charge
V
DD
= 720V, I
D
= 7.4A,
V
GS
= 10V
51
72
nC
Q
gs
Gate-Source Charge
12.5
nC
Q
gd
Gate-Drain Charge
23.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 720V, I
D
= 7.4 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
22
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
31
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
7.3
A
I
SDM
(2)
Source-drain Current (pulsed)
29.2
A
V
SD
(1)
Forward On Voltage
I
SD
= 7.3 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 7.4 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
700
ns
Q
rr
Reverse Recovery Charge
6.3
C
I
RRM
Reverse Recovery Current
18
A
Safe Operating Area for Max220I
Safe Operating Area for Max220
STU7NB90 - STU7NB90I
4/9
Thermal Impedence for Max220I
Thermal Impedence for Max220
Static Drain-source On Resistance
Transconductance
Output Characteristics
Transfer Characteristics
5/9
STU7NB90 - STU7NB90I
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
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