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Sep 2000
STU9NC80Z
STU9NC80ZI
N-CHANNEL 800V - 0.82
- 8.6A Max220/I-Max220
Zener-Protected PowerMESHTMIII MOSFET
s
TYPICAL R
DS
(on) = 0.82
s
EXTREMELY HIGH dv/dt CAPABILITY
s
GATE-TO-SOURCE ZENER DIODES
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STU9NC80Z
STU9NC80ZI
800 V
800 V
<0.9
<0.9
8.6 A
8.6 A
Symbol
Parameter
Value
Unit
STU9NC80Z
STU9NC80ZI
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
800
V
V
GS
Gate- source Voltage
25
V
I
D
Drain Current (continuos) at T
C
= 25C
8.6
8.6(*)
A
I
D
Drain Current (continuos) at T
C
= 100C
5.4
5.4(*)
A
I
DM
(1)
Drain Current (pulsed)
34.4
34.4(*)
A
P
TOT
Total Dissipation at T
C
= 25C
160
55
W
Derating Factor
1.28
0.44
W/C
I
GS
Gate-source Current
50
mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
4
KV
dv/dt(
q
)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2000
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
8.6A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(*)Limited only by maximum temperature allowed
Max220
I-Max220
1
2
3
STU9NC80Z/STU9NC80ZI
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Max220
I-Max220
Rthj-case
Thermal Resistance Junction-case Max
0.78
2.27
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
8.6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
400
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
800
V
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
D
= 1 mA, V
GS
= 0
1
V/C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.7A
0.82
0.9
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
8.6
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=4.7A
13
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3500
pF
C
oss
Output Capacitance
230
pF
C
rss
Reverse Transfer
Capacitance
25
pF
3/10
STU9NC80Z/STU9NC80ZI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
T (25-T) BV
GSO
(25)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 400V, I
D
= 4.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
35
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 640V, I
D
= 9 A,
V
GS
= 10V
72.2
101
nC
Q
gs
Gate-Source Charge
19.5
nC
Q
gd
Gate-Drain Charge
24.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 640V, I
D
= 9 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
32
ns
t
f
Fall Time
42
ns
t
c
Cross-over Time
67
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
8.6
A
I
SDM
(2)
Source-drain Current (pulsed)
34.4
A
V
SD
(1)
Forward On Voltage
I
SD
= 8.6 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 9 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
730
ns
Q
rr
Reverse Recovery Charge
7.2
C
I
RRM
Reverse Recovery Current
19.5
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
25
V
T
Voltage Thermal Coefficient
T=25C Note(3)
1.3
10
-4
/C
Rz
Dynamic Resistance
I
GS
= 50 mA, V
GS
= 0
90
STU9NC80Z/STU9NC80ZI
4/10
Safe Operating Area For I-Max220
Safe Operating Area For Max220
Thermal Impedance For Max220
Output Characteristics
Thermal Impedance For I-Max220
Transfer Characteristics
5/10
STU9NC80Z/STU9NC80ZI
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage
Capacitance Variations
Static Drain-source On Resistance
Transconductance
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