1/9
February 2002
STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6
- 10A - TO-247/ISOWATT218
PowerMeshTMII MOSFET
(1)I
SD
10A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(*) Limited only by Maximum Temperature Allowed
s
TYPICAL R
DS
(on) = 0.6
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STW10NC60
STH10NC60FI
600 V
600 V
< 0.75
< 0.75
10 A
10 A (*)
Symbol
Parameter
Value
Unit
STW10NC60
STH10NC60FI
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
10
10 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
6.3
6.3 (*)
A
I
DM
(1)
Drain Current (pulsed)
40
40 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
160
60
W
Derating Factor
1.28
0.48
W/C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
TO-247
ISOWATT218
1
2
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW10NC60 / STH10NC60FI
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-247
ISOWATT218
Rthj-case
Thermal Resistance Junction-case Max
0.78
2.08
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
820
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.5 A
0.6
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=20 V
,
I
D
= 4.5A
9
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1420
pF
C
oss
Output Capacitance
205
pF
C
rss
Reverse Transfer
Capacitance
35
pF
3/9
STW10NC60 / STH10NC60FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
20
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 9.0 A,
V
GS
= 10V
55
77
nC
Q
gs
Gate-Source Charge
4.5
nC
Q
gd
Gate-Drain Charge
31
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
64
32
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, I
D
= 9.0 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
19
13
32
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
10
A
I
SDM
(2)
Source-drain Current (pulsed)
40
A
V
SD
(1)
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 9 A, di/dt = 100A/s,
V
DD
= 100V, Tj = 150C
(see test circuit, Figure 5)
600
ns
Q
rr
Reverse Recovery Charge
4.7
C
I
RRM
Reverse Recovery Current
15.5
A
Safe Operating Area for ISOWATT218
Safe Operating Area for TO-247
STW10NC60 / STH10NC60FI
4/9
Thermal Impedance for ISOWATT218
Thermal Impedance for TO-247
Static Drain-source On Resistance
Transconductance
Output Characteristics
Transfer Characteristics
5/9
STW10NC60 / STH10NC60FI
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STW10NC60 / STH10NC60FI
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
STW10NC60 / STH10NC60FI
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
D
2.20
2.60
0.08
0.10
E
0.40
0.80
0.015
0.03
F
1
1.40
0.04
0.05
F1
3
0.11
F2
2
0.07
F3
2
2.40
0.07
0.09
F4
3
3.40
0.11
0.13
G
10.90
0.43
H
15.45
15.75
0.60
0.62
L
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
0.17
L2
18.50
0.72
L3
14.20
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
M
2
3
0.07
0.11
V
5
5
V2
60
60
Dia
3.55
3.65
0.14
0.143
TO-247 MECHANICAL DATA
STW10NC60 / STH10NC60FI
8/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
1.05
1.25
0.041
0.049
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
9/9
STW10NC60 / STH10NC60FI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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