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October 2005
STP11NM80 - STF11NM80
STB11NM80 - STW11NM80
N-CHANNEL 800V - 0.35
- 11 A TO-220 /FP/D
2
PAK/TO-247
MDmeshTM MOSFET
Table 1: General Features
TYPICAL R
DS
(on) = 0.35
LOW GATE INPUT RESISTANCE
LOW INPUT CAPACITANCE AND GATE
CHARGE
BEST R
DS
(on)*Qg IN THE INDUSTRY
DESCRIPTION
The MDmeshTM associates the Multiple Drain pro-
cess with the Company's PowerMeshTM horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company's proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar competi-
tion's products.
APPLICATIONS
The 800 V MDmeshTM family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
R
DS(on)
*Q
g
I
D
STP11NM80
STF11NM80
STB11NM80
STW11NM80
800 V
800 V
800 V
800 V
< 0.40
< 0.40
< 0.40
< 0.40
14
nC
14
nC
14
nC
14
nC
11 A
11 A
11 A
11 A
1
2
3
1
3
1
2
3
1
2
3
TO-220
D
2
PAK
TO-247
TO-220FP
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP11NM80
P11NM80
TO-220
TUBE
STF11NM80
F11NM80
TO-220FP
TUBE
STB11NM80T4
B11NM80
D
2
PAK
TAPE & REEL
STW11NM80
W11NM80
TO-247
TUBE
Rev. 2
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
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Table 3: Absolute Maximum ratings
(
) Pulse width limited by safe operating area
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
Parameter
Value
Unit
TO-220/D
2
PAK
TO-247
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
800
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
11
11 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
4.7
4.7 (*)
A
I
DM
( )
Drain Current (pulsed)
44
44 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
150
35
W
Derating Factor
1.2
0.28
W /C
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
C
TO-220/D
2
PAK
TO-247
TO-220FP
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.83
3.6
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= 2.5A, V
DD
= 50 V)
400
mJ
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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
800
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
10
100
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
=5.5 A
0.35
0.40
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 7.5 A
8
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
1630
750
30
pF
pF
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2.7
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 400 V, I
D
= 5.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 4)
22
17
46
15
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 640 V, I
D
= 11 A,
V
GS
= 10V
43.6
11.6
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
11
44
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 11 A, V
GS
= 0
0.86
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11 A, di/dt = 100 A/s
V
DD
= 50 V, T
j
= 25C
(see test circuit, Figure 5)
612
7.22
23.6
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 11 A, di/dt = 100 A/s
V
DD
= 50 V, T
j
= 150C
(see test circuit, Figure 5)
970
11.25
23.2
ns
C
A
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
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Figure 3: Safe Operating Area For D
2
PAK/
TO-247 / TO-220
Figure 4: Thermal Impedance For D
2
PAK/
TO-247 / TO-220
Figure 5: Output Characteristics
Figure 6: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 8: Output Characteristics
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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
Figure 9: Transfer Characteristics
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Normalized Gate Threshold Voltage
vs Temperature
Figure 13: Static Drain-Source On Resistance
Figure 14: Capacitance Variations
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