STW12NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.5
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE GHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
DS(on)
and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS ( on)
I
D
STW12NA50
500 V
< 0. 6
11.6 A
1
2
3
TO-247
December 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
D S
Drain-source Voltage (V
GS
= 0)
500
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
11.6
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
7.3
A
I
D M
(
)
Drain Current (pulsed)
46.4
A
P
tot
Total Dissipation at T
c
= 25
o
C
170
W
Derating Factor
1. 36
W/
o
C
T
stg
St orage Temperat ure
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
1/9
THERMAL DATA
R
thj-cas e
R
thj- amb
R
thj- amb
T
l
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.73
30
0.1
300
o
C/ W
o
C/ W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
11.6
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 50 V)
670
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
26.5
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
7.3
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
500
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
25
250
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2. 25
3
3. 75
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10V
I
D
= 6 A
0.5
0.6
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
12
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 6 A
6
9
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
1750
250
80
2500
370
130
pF
pF
pF
STW12NA50
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 6 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
20
32
28
45
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 400 V
I
D
= 12 A
R
G
= 47
V
GS
= 10 V
(see test circuit, figure 5)
190
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
= 12 A
V
G S
= 10 V
80
12
37
110
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 12 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
16
12
30
22
18
42
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
11.6
46.4
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 12 A
V
G S
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
600
10.2
34
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Areas
Thermal Impedance
STW12NA50
3/9
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STW12NA50
4/9
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Cross-over Time
Turn-off Drain-source Voltage Slope
STW12NA50
5/9
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
STW12NA50
6/9
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For
Resistive Load
STW12NA50
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.208
A1
2.87
0.113
A2
1.5
2.5
0.059
0.098
b
1
1.4
0.039
0.055
b1
2.25
0.088
b2
3.05
3.43
0.120
0.135
C
0.4
0.8
0.015
0.031
D
20.4
21.18
0.803
0.833
e
5.43
5.47
0.213
0.215
E
15.3
15.95
0.602
0.628
L
15.57
0.613
L1
3.7
4.3
0.145
0.169
Q
5.3
5.84
0.208
0.230
P
3.5
3.71
0.137
0.146
D
Q
A
A2
A1
C
E
e
b1
b
b2
L
L1
TO-247 MECHANICAL DATA
STW12NA50
8/9
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
STW12NA50
9/9
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