1/8
May 2001
STW12NB60
N-CHANNEL 600V - 0.5
- 12A TO-247
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 0.5
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
TYPE
V
DSS
R
DS(on)
I
D
STW12NB60
600V
< 0.6
12 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
12
A
I
D
Drain Current (continuos) at T
C
= 100C
7.56
A
I
DM
(
q
)
Drain Current (pulsed)
48
A
P
TOT
Total Dissipation at T
C
= 25C
190
W
Derating Factor
1.52
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
4
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
12A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW12NB60
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.658
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
12
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
450
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 5.5A
0.5
0.60
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5A
9
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2200
pF
C
oss
Output Capacitance
285
pF
C
rss
Reverse Transfer
Capacitance
30
pF
3/8
STW12NB60
Safe Operating Area
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 300V, I
D
= 5.5 A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
27
ns
t
r
12
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 11 A,
V
GS
= 10V, R
G
= 4.7
54
70
nC
Q
gs
Gate-Source Charge
17
nC
Q
gd
Gate-Drain Charge
23
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, I
D
= 11 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
20
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
32
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
12
A
I
SDM
(2)
Source-drain Current (pulsed)
48
A
V
SD
(1)
Forward On Voltage
I
SD
= 12 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 11 A, di/dt = 100 A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
600
ns
Q
rr
Reverse Recovery Charge
6.5
C
I
RRM
Reverse Recovery Current
20.5
A
STW12NB60
4/8
Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
5/8
STW12NB60
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
PDF 
ZIP