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Электронный компонент: STW12NC60

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June 2000
STW12NC60
N-CHANNEL 600V - 0.48
- 12A TO-247
PowerMesh
TM
II MOSFET
s
TYPICAL R
DS
(on) = 0.48
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is the evolution of the first
generation of MESH OVERLAY
TM
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(
)Pulse width limite d by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW12NC60
600V
< 0.55
12 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25
C
12
A
I
D
Drain Current (continuos) at T
C
= 100
C
8
A
I
DM
(
q
)
Drain Current (pulsed)
18
A
P
TOT
Total Dissipation at T
C
= 25
C
190
W
Derating Factor
1.52
W/
C
dv/dt(1)
Peak Diode Recovery voltage slope
3
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
11A, di/dt
100A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW12NC60
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25
C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.66
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
12
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
850
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125
C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 6A
0.48
0.55
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
12
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=6A
13
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2150
pF
C
oss
Output Capacitance
275
pF
C
rss
Reverse Transfer
Capacitance
39
pF
3/8
STW12NC60
Thermal Impedance
Safe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 300V, I
D
= 6 A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
20
ns
t
r
15
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 12 A,
V
GS
= 10V, R
G
= 4.7
65
90
nC
Q
gs
Gate-Source Charge
13
nC
Q
gd
Gate-Drain Charge
28
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, I
D
= 12 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
14
ns
t
f
Fall Time
25
ns
t
c
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
12
A
I
SDM
(2)
Source-drain Current (pulsed)
48
A
V
SD
(1)
Forward On Voltage
I
SD
= 12 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 12 A, di/dt = 100A/
s,
V
DD
= 100V, T
j
= 150
C
(see test circuit, Figure 5)
590
ns
Q
rr
Reverse Recovery Charge
5.6
C
I
RRM
Reverse Recovery Current
19
A
STW12NC60
4/8
Capacitance Variations
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Transfer Characteristics
Output Characteristics
5/8
STW12NC60
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics