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June 2002
STP12NM50FD-STP12NM50FDFP-STW14NM50FD
STB12NM50FD - STB12NM50FD-1
N-CHANNEL500V-0.32
-12ATO-220/FP/D
2
PAK/I
2
PAK/TO-247
FDmeshTM Power MOSFET (with FAST DIODE)
s
TYPICAL R
DS
(on) = 0.32
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
s
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmeshTM
associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
s
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP12NM50FD
STP12NM50FDFP
STB12NM50FD
STB12NM50FD-1
STW14NM50FD
500 V
500 V
500 V
500 V
500 V
< 0.4
< 0.4
< 0.4
< 0.4
< 0.4
12 A
12 A
12 A
12 A
14 A
160 W
35 W
160 W
160 W
175 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP12NM50FD
P12NM50FD
TO-220
TUBE
STP12NM50FDFP
P12NM50FDFP
TO-220FP
TUBE
STB12NM50FD
B12NM50FD
D
2
PAK
TUBE
STB12NM50FDT4
B12NM50FD
D
2
PAK
TAPE & REEL
STB12NM50FD-1
B12NM50FD
I
2
PAK
TUBE
STW14NM50FD
W14NM50FD
TO-247
TUBE
TO-220
TO-220FP
1
2
3
1
2
3
TO-247
1
2
3
1
3
I
2
PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
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ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
12A, di/dt
400
A, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
TO-247
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
12
12 (*)
14
A
I
D
Drain Current (continuous) at T
C
= 100C
7.5
7.5 (*)
8.8
A
I
DM
(
l
)
Drain Current (pulsed)
48
48 (*)
56
A
P
TOT
Total Dissipation at T
C
= 25C
160
35
175
W
Derating Factor
1.28
0.28
1.4
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
- 65 to 150
- 65 to 150
C
C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.78
3.57
0.715
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
400
mJ
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STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 6A
0.32
0.4
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 6 A
9.8
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1027
205
24
pF
pF
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3.7
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 250 V, I
D
= 6 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
19
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 12 A,
V
GS
= 10V
27.5
8
12
38.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V, I
D
= 12 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
39
18
29
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
12
48
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 12 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 12 A, di/dt = 100A/s
V
DD
= 30V, T
j
= 150C
(see test circuit, Figure 5)
224
1.3
12
ns
C
A
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
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Safe Operating Area For TO-247
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-247
Thermal Impedance For TO-220FP
Thermal Impedance For TO-220/D2PAK/I2PAK
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STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Output Characteristics
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