1/11
March 2004
STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38
- 14A TO-220 / I
2
SPAK / TO-247
Zener-Protected SuperMESHTM MOSFET
s
TYPICAL R
DS
(on) = 0.38
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
600 V
600 V
600 V
< 0.42
< 0.42
< 0.42
14 A
14 A
14 A
190 W
190 W
190 W
PART NUMBER
MARKING
PACKAGE
PACKAGING
STP16NK60Z
P16NK60Z
TO-220
TUBE
STB16NK60Z-S
B16NK60Z
I
2
SPAK
TUBE
STW16NK60Z
W16NK60Z
TO-247
TUBE
TO-220
1
2
3
I
2
SPAK
TO-247
1
2
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
14 A, di/dt
200 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
14
A
I
D
Drain Current (continuous) at T
C
= 100C
8.8
A
I
DM
( )
Drain Current (pulsed)
56
A
P
TOT
Total Dissipation at T
C
= 25C
190
W
Derating Factor
1.51
W/C
V
ESD(G-S)
Gate source ESD (HBM-C= 100pF, R= 1.5K
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
TO-220/ ISPAK
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.66
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
50
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
14
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
360
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
3/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 A
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 7 A
0.38
0.42
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 7 A
12
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2650
285
62
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
158
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 480 V, I
D
= 14 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
30
25
70
15
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 14 A,
V
GS
= 10V
86
17
46
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
14
56
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 14 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A, di/dt = 100 A/s
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
490
5.4
22
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A, di/dt = 100 A/s
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
585
7
24
ns
C
A
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
4/11
Thermal Impedance for TO-247
Thermal Impedance for TO-220/ISPAK
Safe Operating Area for TO-220/ISPAK
Safe Operating Area for TO-247
Transfer Characteristics
Output Characteristics
5/11
STP16NK60Z - STB16NK60Z-S - STW16NK60Z
Transconductance
Static Drain-source On Resistance
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Gate Charge vs Gate-source Voltage
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