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August 2002
STW20NM50
N-CHANNEL 500V - 0.20
- 20A TO-247
MDmeshTMPower MOSFET
n
TYPICAL R
DS
(on) = 0.20
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW20NM50
500V
< 0.25
20 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
20
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
A
I
DM
(
l
)
Drain Current (pulsed)
80
A
P
TOT
Total Dissipation at T
C
= 25C
214
W
Derating Factor
1.44
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1) I
SD
20A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW20NM50
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case
Thermal Resistance Junction-case Max
0.585
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= 5 A, V
DD
= 35 V)
650
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
0.20
0.25
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
10
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1480
pF
C
oss
Output Capacitance
285
pF
C
rss
Reverse Transfer
Capacitance
34
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
130
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
3/8
STW20NM50
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
24
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 400 V, I
D
= 20 A,
V
GS
= 10 V
40
56
nC
Q
gs
Gate-Source Charge
13
nC
Q
gd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
9
ns
t
f
Fall Time
8.5
ns
t
c
Cross-over Time
23
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
20
A
I
SDM
(2)
Source-drain Current (pulsed)
80
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
350
4.6
26
ns
C
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
435
5.9
27
ns
C
A
Safe Operating Area
STW20NM50
4/8
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Transfer Characteristics
Output Characteristics
5/8
STW20NM50
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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