1/8
June 2002
STW20NM50FD
N-CHANNEL 500V - 0.22
- 20A TO-247
FDmeshTM Power MOSFET (with FAST DIODE)
(1)I
SD
20A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*)Limited only by maximum temperature allowed
s
TYPICAL R
DS
(on) = 0.22
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE CHARGE
s
LOW GATE INPUT RESISTANCE
s
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmeshTM
associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
APPLICATIONS
s
ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW20NM50FD
500V
<0.25
20 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
20
A
I
D
Drain Current (continuos) at T
C
= 100C
14
A
I
DM
(
q
)
Drain Current (pulsed)
80
A
P
TOT
Total Dissipation at T
C
= 25C
214
W
Derating Factor
1.42
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
20
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW20NM50FD
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case
Thermal Resistance Junction-case Max
0.585
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
700
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
0.22
0.25
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
9
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1380
pF
C
oss
Output Capacitance
290
pF
C
rss
Reverse Transfer
Capacitance
40
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
130
pF
R
g
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2.8
3/8
STW20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 10 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
22
ns
t
r
Rise Time
20
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 20A,
V
GS
= 10V
38
53
nC
Q
gs
Gate-Source Charge
18
nC
Q
gd
Gate-Drain Charge
10
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
6
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
20
A
I
SDM
(2)
Source-drain Current (pulsed)
80
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 20 A, di/dt = 100A/s,
V
DD
= 60V, T
j
= 150C
(see test circuit, Figure 5)
245
ns
Q
rr
Reverse Recovery Charge
2
C
I
RRM
Reverse Recovery Current
16
A
Safe Operating Area
Thermal Impedance
STW20NM50FD
4/8
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
Gate Charge vs Gate-source Voltage
5/8
STW20NM50FD
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
PDF 
ZIP