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February 2005
STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25
- 20A TO-220/FP/D/IPAK/TO-247
MDmeshTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.25
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion's products.
APPLICATIONS
The MDmeshTM family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
600 V
600 V
600 V
600 V
600 V
< 0.29
< 0.29
< 0.29
< 0.29
< 0.29
20 A
20 A
20 A
20 A
20 A
1
2
3
1
2
3
1
3
1
2
3
TO-220
TO-220FP
DPAK
IPAK
1
2
3
TO-247
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP20NM60
P20NM60
TO-220
TUBE
STP20NM60FP
P20NM60FP
TO-220FP
TUBE
STB20NM60T4 B20NM60 DPAK TAPE & REEL
STB20NM60-1
B20NM60
IPAK
TUBE
STW20NM60
W20NM60
TO-247
TUBE
Rev.2
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1)
I
SD
20 A, di/dt
400 A/s,
V
DD
V
(BR)/DSS,
T
j
T
JMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Value
Unit
TO-220/DPAK/
IPAK/TO-247
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
20
20 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
12.6 (*)
A
I
DM
( )
Drain Current (pulsed)
80
80 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
192
45
W
Derating Factor
1.2
0.36
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
V
T
stg
Storage Temperature
-65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220/DPAK/
IPAK/TO-247
TO-220FP
Unit
Rthj-case Thermal Resistance Junction-case Max
0.65
2.8
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max. Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
650
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10 A
0.25
0.29
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10 A
11
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1500
350
35
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400 V
215
pF
t
d(on)
t
r
t
d(off)
t
f
t
c
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Cross-over Time
V
DD
= 200 V, I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480 V, I
D
= 20 A
(See test circuit, Figure 5)
25
20
6
11
21
ns
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V, I
D
= 20 A,
V
GS
= 10V
39
10
20
54
nC
nC
nC
R
g
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.6
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=20 A, di/dt = 100 A/s
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
390
5
25
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=20 A, di/dt = 100 A/s
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
510
6.5
26
ns
C
A
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
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Figure 3: Safe Operating Area for TO-220/
DPAK/IPAK
Figure 4: Safe Operating Area for TO-220FP
Figure 5: Safe Operating Area for TO-247
Figure 6: Thermal Impedance for TO-220/
DPAK/IPAK
Figure 7: Thermal Impedance for TO-220FP
Figure 8: Thermal Impedance for TO-247
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Transfer Characteristics
Figure 12: Gate Charge vs Gate-source Voltage
Figure 13: Normalized Gate Threshold Voltage
vs Temp.
Figure 14: Static Drain-source On Resistance
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