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June 2002
STW45NM50FD
N-CHANNEL 500V - 0.07
- 45A TO-247
FDmeshTMPower MOSFET (With FAST DIODE)
n
TYPICAL R
DS
(on) = 0.07
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmeshTM
associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
n
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW45NM50FD
500V
< 0.1
45 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
45
A
I
D
Drain Current (continuos) at T
C
= 100C
28.4
A
I
DM
(
l
)
Drain Current (pulsed)
180
A
P
TOT
Total Dissipation at T
C
= 25C
417
W
Derating Factor
2.08
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1) I
SD
45A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW45NM50FD
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
0.3
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
22.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
800
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 22.5A
0.07
0.10
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3600
pF
C
oss
Output Capacitance
680
pF
C
rss
Reverse Transfer
Capacitance
82
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
350
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2
3/8
STW45NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 22.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
28
ns
t
r
Rise Time
28
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
92
120
nC
Q
gs
Gate-Source Charge
22
nC
Q
gd
Gate-Drain Charge
40
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 45A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
11
ns
t
f
Fall Time
25
ns
t
c
Cross-over Time
44
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
45
A
I
SDM
(2)
Source-drain Current (pulsed)
180
A
V
SD
(1)
Forward On Voltage
I
SD
= 45A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 45A, di/dt = 100A/s,
V
DD
= 100V
(see test circuit, Figure 5)
245
ns
Q
rr
Reverse Recovery Charge
2.2
C
I
RRM
Reverse Recovery Current
18
A
Safe Operating Area
Thermal Impedence
STW45NM50FD
4/8
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
Transconductance
Output Characteristics
Transfer Characteristics
STW45NM50FD
5/8
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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