STH60N10/FI
STW60N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.02
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
VERY HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
May 1993
TYPE
V
DSS
R
DS ( on)
I
D
STH60N10
STH60N10FI
STW60N10
100 V
100 V
100 V
< 0.025
< 0.025
< 0.025
60 A
36 A
60 A
TO-218
ISOWATT218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STH/ STW60N10
STH60N10FI
V
D S
Drain-source Voltage (V
GS
= 0)
100
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
60
36
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
42
22
A
I
D M
(
)
Drain Current (pulsed)
240
240
A
P
tot
Total Dissipation at T
c
= 25
o
C
200
70
W
Derating Factor
1. 33
0.56
W/
o
C
V
ISO
I nsulat ion Withstand Voltage (DC)
4000
V
T
stg
St orage Temperat ure
-65 to 175
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
175
150
o
C
(
) Pulse width limited by safe operating area
1
2
3
1
2
3
TO-247
1/11
THERMAL DATA
TO-218/TO-247
ISOWATT218
R
thj-cas e
Thermal Resist ance Junct ion-case
Max
0.75
1.79
o
C/W
R
thj- amb
R
t hc- sin k
T
l
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
30
0.1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
60
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
720
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
180
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
37
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
100
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
250
1000
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
2.9
4
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
I
D
= 30 A
T
c
= 100
o
C
0.02
0.025
0. 05
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
60
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 30 A
25
35
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
4000
1100
250
5000
1400
350
pF
pF
pF
STH60N10/FI STW60N10
2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 80 V
I
D
= 30 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 3)
90
270
130
380
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 80 V
I
D
= 60 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
270
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V
I
D
= 30 A
V
GS
= 10 V
120
16
60
170
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 80 V
I
D
= 60 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
200
210
410
280
290
570
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 60 A
V
G S
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
(see test circuit, figure 5)
180
1
11
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247
Safe Operating Areas For ISOWATT218
STH60N10/FI STW60N10
3/11
Thermal Impedeance For TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Output Characteristics
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
STH60N10/FI STW60N10
4/11
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
STH60N10/FI STW60N10
5/11
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
STH60N10/FI STW60N10
6/11
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STH60N10/FI STW60N10
7/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.208
A1
2.87
0.113
A2
1.5
2.5
0.059
0.098
b
1
1.4
0.039
0.055
b1
2.25
0.088
b2
3.05
3.43
0.120
0.135
C
0.4
0.8
0.015
0.031
D
20.4
21.18
0.803
0.833
e
5.43
5.47
0.213
0.215
E
15.3
15.95
0.602
0.628
L
15.57
0.613
L1
3.7
4.3
0.145
0.169
Q
5.3
5.84
0.208
0.230
P
3.5
3.71
0.137
0.146
D
Q
A
A2
A1
C
E
e
b1
b
b2
L
L1
TO-247 MECHANICAL DATA
STH60N10/FI STW60N10
8/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1
2
3
TO-218 (SOT-93) MECHANICAL DATA
P025A
STH60N10/FI STW60N10
9/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.45
1
0.017
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L1
A
C
D
E
H
G
M
F
L6
1
2
3
U
L5
L4
D1
N
L3
L2
ISOWATT218 MECHANICAL DATA
P025C
STH60N10/FI STW60N10
10/11
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
STH60N10/FI STW60N10
11/11
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