STW6NA80
STH6NA80FI
N - CHANNEL 800V - 1.8
- 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 1.8
s
AVALANCE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
VERY HIGH CURRENT CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
ST W6NA80
STH6NA80F I
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain- gate Volt age (R
GS
= 20 k
)
800
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
5.4
3.4
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
3.4
2.1
A
I
DM
(
)
Drain Current (pulsed)
22
22
A
P
tot
T otal Dissipation at T
c
= 25
o
C
150
60
W
Derating Factor
1.2
0.48
W /
o
C
V
ISO
I nsulat ion W ithstand Voltage (DC)
4000
V
T
s tg
Storage Temperat ure
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW 6NA80
STH6NA80FI
800 V
800 V
< 2.2
< 2.2
5. 4 A
3. 4 A
October 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/10
THERMAL DATA
TO-247
ISOW AT T218
R
thj -case
Thermal Resistance Junction-case
Max
0.83
2.08
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
30
0. 1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by T
j
max,
< 1%)
5. 4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
5. 8
mJ
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(T
c
= 100
o
C, pulse widt h limit ed by T
j
max,
< 1%)
3. 4
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
800
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 100
o
C
25
50
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
G S(th)
Gat e Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source O n
Resist ance
V
GS
= 10 V
I
D
= 3 A
V
GS
= 10 V
I
D
= 3 A
T
c
= 100
o
C
1.8
2. 2
4. 4
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
5. 4
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
g
f s
(
)
Forward
Transconduct ance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 3 A
3
5.5
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1250
140
35
1700
190
50
pF
pF
pF
STW6NA80-STH6NA80FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
I
D
= 3 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
40
100
55
135
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 640 V
I
D
= 6 A
R
G
= 47
V
GS
= 10 V
(see test circuit, f igure 5)
180
A/
s
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 640 V
I
D
= 6 A
V
GS
= 10 V
55
8
24
75
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
I
D
= 6 A
R
G
= 47
V
GS
= 10 V
(see test circuit, figure 5)
75
25
110
100
35
150
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
5. 4
22
A
A
V
SD
(
)
Forward On Volt age
I
SD
= 6 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
800
15.2
38
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
STW6NA80-STH6NA80FI
3/10
Thermal Impedance for TO-247
Derating Curve for TO-247
Output Characteristics
Thermal Impedance for ISOWATT218
Derating Curve for ISOWATT218
Transfer Characteristics
STW6NA80-STH6NA80FI
4/10
Transconductance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
STW6NA80-STH6NA80FI
5/10
Turn-on Current Slope
Cross-over Time
Accidental Overload Area
Turn-off Drain-source Voltage Slope
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
STW6NA80-STH6NA80FI
6/10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW6NA80-STH6NA80FI
7/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
TO-247 MECHANICAL DATA
STW6NA80-STH6NA80FI
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L1
A
C
D
E
H
G
M
F
L6
1
2
3
U
L5
L4
D1
N
L3
L2
P025C
ISOWATT218 MECHANICAL DATA
STW6NA80-STH6NA80FI
9/10
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