STW6NA90
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 1.45
s
30V GATE TO SOURCE VOLTAGE
RANTING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCE
s
GATE CHARGE MINIMIZED
s
REDUCED VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
January 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
900
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
6
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
3.8
A
I
DM
(
)
Drain Current (pulsed)
24
A
P
tot
Total Dissipation at T
c
= 25
o
C
160
W
Derating Factor
1.28
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW6NA90
900 V
< 1.9
6 A
TO-247
1
2
3
1/5
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
30
0.1
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
600
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
900
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 100
o
C
25
250
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 3 A
1.45
1.9
I
D(on )
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
6
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3 A
5
6.6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
1760
190
50
2480
270
75
pF
pF
pF
STW6NA90
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 450 V I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
27
30
40
45
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 720 V I
D
= 6 A V
GS
= 10 V
72
10
34
105
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 720 V I
D
= 6 A
R
G
= 4.7
V
GS
= 10 V
18
7
31
27
12
47
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
6
24
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 6 A V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A di/dt = 100 A/
s
V
DD
= 100 V T
j
= 150
o
C
830
13.8
33
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STW6NA90
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
TO-247 MECHANICAL DATA
STW6NA90
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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STW6NA90
5/5
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