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Электронный компонент: STW8NA80

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STW8NA80
STH8NA80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 1.3
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE GHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gedness and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Uni t
STW 8NA80
ST H8NA80FI
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
800
V
V
GS
G ate-source Volt age
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
7. 2
4. 5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
4. 5
2. 8
A
I
DM
(
)
Drain Current (pulsed)
28. 8
28. 8
A
P
tot
T otal Dissipation at T
c
= 25
o
C
175
70
W
Derating Factor
1. 4
0.56
W/
o
C
V
ISO
I nsulation W ithstand Voltage (DC)
4000
V
T
s tg
Storage T emperature
-65 to 150
o
C
T
j
Max. O perat ing Junct ion T emperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW 8NA80
STH8NA80F I
800 V
800 V
< 1.50
< 1.50
7. 2 A
4. 5 A
October 1998
TO-247
ISOWATT218
1
2
3
1
2
3
1/6
THERMAL DATA
TO-247
ISOWATT 218
R
thj -case
Thermal Resistance Junction-case
Max
0. 71
1. 78
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
30
0.1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
7.2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
700
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
800
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 100
o
C
50
500
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 4A
1.3
1. 5
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
7. 2
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 4 A
4. 5
7.9
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1750
188
50
2300
245
70
pF
pF
pF
STW8NA80 STH8NA80FI
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
I
D
= 4 A
R
G
= 4.7
V
G S
= 10 V
20
28
28
38
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 640 V
I
D
= 8 A
R
G
= 47
V
G S
= 10 V
170
A/
s
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 400 V
I
D
= 8 A
V
GS
= 10 V
75
10
35
100
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 640 V
I
D
= 8 A
R
G
= 4.7
V
G S
= 10 V
18
20
25
25
28
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
7. 2
28. 8
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 7.2 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7.5 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
850
17
40
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STW8NA80 STH8NA80FI
3/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
TO-247 MECHANICAL DATA
STW8NA80 STH8NA80FI
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L1
A
C
D
E
H
G
M
F
L6
1
2
3
U
L5
L4
D1
N
L3
L2
P025C
ISOWATT218 MECHANICAL DATA
STW8NA80 STH8NA80FI
5/6