STW8NB100
N - CHANNEL 1000V - 1.2
- 8A - TO-247
PowerMESH
TM
MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 1.2
s
EXTREMELY HIGH dv/dt CAPABILITY
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
LOW INTRINSIC CAPACITANCE
s
GATE CHARGE MINIMIZED
s
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company's proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
1000
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
1000
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
8
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
5
A
I
DM
(
)
Drain Current (pulsed)
32
A
P
tot
Total Dissipation at T
c
= 25
o
C
190
W
Derating Factor
1.52
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4
V/ns
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area (
1
) I
SD
8 ,
di/dt
200 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STW8NB100
1000 V
< 1.5
8 A
March 1999
TO-247
1
2
3
1/5
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
8
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
600
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
1000
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 4 A
1.2
1.5
I
D(o n)
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )max
V
GS
= 10 V
8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )max
I
D
= 4 A
8.9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
2900
275
27
pF
pF
pF
STW8NB100
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
Turn-on Time
Rise Time
V
DD
= 500 V I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
32
13
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 800 V I
D
= 7 A V
GS
= 10 V
68
16
31
95
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 800 V I
D
= 7 A
R
G
= 4.7
V
GS
= 10 V
32
32
40
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 8 A V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A di/dt = 100 A/
s
V
DD
= 100 V T
j
= 150
o
C
1000
11
21
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STW8NB100
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
TO-247 MECHANICAL DATA
STW8NB100
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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STW8NB100
5/5
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