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December 2001
STW8NC80Z
N-CHANNEL 800V - 1.3
- 6.7A TO-247
Zener-Protected PowerMESHTMIII MOSFET
n
TYPICAL R
DS
(on) = 1.3
n
EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
n
100% AVALANCHE TESTED
n
VERY LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(1)I
SD
6.7A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STW8NC80Z
800 V
< 1.5
6.7 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
800
V
V
GS
Gate- source Voltage
25
V
I
D
Drain Current (continuos) at T
C
= 25C
6.7
A
I
D
Drain Current (continuos) at T
C
= 100C
4.2
A
I
DM
(
q
)
Drain Current (pulsed)
27
A
P
TOT
Total Dissipation at T
C
= 25C
160
W
Derating Factor
1.28
W/C
I
GS
Gate-source Current
50
mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
3
KV
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW8NC80Z
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.78
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6.7
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
275
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
800
V
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
D
= 1 mA, V
GS
= 0
0.9
V/C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 3.3 A
1.3
1.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=3.3 A
6
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2350
pF
C
oss
Output Capacitance
164
pF
C
rss
Reverse Transfer
Capacitance
17
pF
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STW8NC80Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
SWITCHING OFF (INDUCTIVE LOAD)
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
T (25-T) BV
GSO
(25)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 400V, I
D
= 3A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
33
ns
t
r
12
ns
Q
g
Total Gate Charge
V
DD
= 640V, I
D
= 6 A,
V
GS
= 10V
43
58
nC
Q
gs
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 640V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
13
ns
t
f
Fall Time
13
ns
t
c
Cross-over Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
6.7
A
I
SDM
(2)
Source-drain Current (pulsed)
24
A
V
SD
(1)
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 6 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
680
ns
Q
rr
Reverse Recovery Charge
6
C
I
RRM
Reverse Recovery Current
18
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
25
V
T
Voltage Thermal Coefficient
T=25C Note(3)
1.3
10
-4
/C
Rz
Dynamic Resistance
I
D
= 20 mA, V
GS
= 0
90
STW8NC80Z
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Thermal Impedance
Safe Operating Area
Transconductance
Static Drain-source On Resistance
Output Characteristics
Transfer Characteristics
5/8
STW8NC80Z
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
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