STW9NA60
STH9NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.69
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
ST W9NA60
STH9NA60F I
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
GS
G ate-source Volt age
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
6.4
9.5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
4
6
A
I
DM
(
)
Drain Current (pulsed)
38
38
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
70
160
W
Derating Factor
0.56
1.28
W /
o
C
V
ISO
I nsulation W ithstand Voltage (DC)
4000
V
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW 9NA60
STH9NA60F I
600 V
600 V
< 0.8
< 0.8
9. 5 A
6. 4 A
October 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/10
THERMAL DATA
TO-247
ISOWATT 218
R
thj -case
Thermal Resistance Junction-case
Max
0. 78
1. 78
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
30
0.1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
9.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
450
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
600
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 100
o
C
25
250
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 4. 5 A
0.69
0. 8
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
9
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 4.5A
5
8.3
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1800
230
65
2350
300
85
pF
pF
pF
STW9NA60-STH9NA60FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, f igure 3)
21
32
30
45
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 480 V
I
D
= 9 A
R
G
= 47
V
G S
= 10 V
(see t est circuit, figure 5)
180
A/
s
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 480 V
I
D
= 9 A
V
G S
= 10 V
75
11
36
100
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 480 V
I
D
= 9 A
R
G
= 4.7
V
G S
= 10 V
(see t est circuit, f igure 5)
16
18
26
23
25
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
9. 5
38
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 9.5 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 9.5 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
660
12
36
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
STW9NA60-STH9NA60FI
3/10
Thermal Impedance for TO-247
Derating Curve for TO-247
Output Characteristics
Thermal Impedance for ISOWATT218
Derating Curve for ISOWATT218
Transfer Characteristics
STW9NA60-STH9NA60FI
4/10
Transconductance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
STW9NA60-STH9NA60FI
5/10
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